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BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
Rev. 2 -- 1 March 2011 Product data sheet
1. Product profile
1.1 General description
30 W LDMOS 2-stage power MMIC for base station applications at frequencies from
860 MHz to 960 MHz. Available in Gull Wing for surface mount (SOT822-1) or flat lead
(SOT834-1).
Table 1. Application information
Typical RF performance at Th = 25 C.
Mode of operation f VDS PL(AV) Gp D IMD3 ACPR
(MHz) (V) (W) (dB) (%) (dBc) (dBc)
2-carrier W-CDMA f1 = 935; f2 = 945 28 2 29 11.5 48.5[1] 52[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at a frequency of 940 MHz:
Average output power = 2 W
Gain = 29 dB (typ)
Efficiency = 11.5 %
IMD3 = 48.5 dBc
ACPR = 52 dBc
Integrated temperature compensated bias
Excellent thermal stability
Biasing of individual stages is externally accessible
Integrated ESD protection
Small component size, very suitable for PA size reduction
On-chip matching (input matched to 50 , output partially matched)
High power gain
Designed for broadband operation (860 MHz to 960 MHz)
NXP Semiconductors BLM6G10-30; BLM6G10-30G
W-CDMA 860 MHz - 960 MHz power MMIC
2. Pinning information
2.1 Pinning
BLM6G10-30
BLM6G10-30G
GND 1 16 GND
VDS1 2
15 n.c.
n.c. 3
n.c. 4
n.c. 5
RF input 6 14 RF output/VDS2
n.c. 7
VGS1 8
VGS2 9
13 n.c.
VDS1 10
GND 11 12 GND
001aak500
Transparent top view
Fig 1. Pin configuration
2.2 Pin description
Table 2. Pin description
Pin Description
1, 11, 12, 16 GROUND
2 VDS1
3, 4, 5, 7, 13, 15 n.c.
6 RF_INPUT
8 VGS1
9 VGS2
10 VDS1
14 RF_OUTPUT/VDS2
flange RF_GROUND
BLM6G10-30_BLM6G10-30G All information provided in this document is subject to legal disclaimers.