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2SD1760(NPN)
TO-251/TO-252-2L Transistor
TO-251
1. BASE
2. COLLECTOR
3. EMITTER
1 2 3
Features
Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A)
Complements the 2SB1184.
MAXIMUM RATINGS (TA=25 unless otherwise noted) TO-252-2L
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 1.5 W
TJ Junction Temperature 150
Tstg Storage Temperature -55 to +150
Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50A, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=50A, IC=0 5 V
Collector cut-off current ICBO VCB=40V, IE=0 1 A
Emitter cut-off current IEBO VEB=4V, IC=0 1 A
DC current gain hFE(1) VCE=3V, IC=500mA 82 390
Collector-emitter saturation voltage VCE(sat) IC=2A, IB=200mA 1 V
Transition frequency fT VCE=5V, IC=500mA,f=30MHz 90 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 40 pF
CLASSIFICATION OF hFE(1)
Rank P Q R
Range 82-180 120-270 180-390
Marking
2SD1760(NPN)
TO-251/TO-252-2L Transistor
Typical Characteristics