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SEMICONDUCTOR KTA1073T
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE CONTROL APPLICATIONS.
PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS.
CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS. E
K B
DIM MILLIMETERS
FEATURES A _
2.9 + 0.2
High Voltage : VCBO=-300V, VCEO=-300V B 1.6+0.2/-0.1
C _
0.70 + 0.05
2
Low Saturation Voltage : VCE(sat)=-0.5V(Max.)
G
3 _
D 0.4 + 0.1
D
A
E 2.8+0.2/-0.3
F
Small Collector Output Capacitance : Cob=5.5pF(Typ.) F _
1.9 + 0.2
1
G
Complementary to KTC3207T. G 0.95
H _
0.16 + 0.05
I 0.00-0.10
J 0.25+0.25/-0.15
K 0.60
C
L 0.55
L
MAXIMUM RATINGS (Ta=25 ) H
I
J J
CHARACTERISTIC SYMBOL RATING UNIT
1. EMITTER
Collector-Base Voltage VCBO -300 V 2. BASE
3. COLLECTOR
Collector-Emitter Voltage VCEO -300 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -100 mA
TSM
Base Current IB -20 mA
Collector Power Dissipation PC * 0.9 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Package mounted on a ceramic board (600 0.8 ) Marking
h FE Rank Lot No.
Type Name
SX
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-300V, IE=0 - - -0.1 A
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 A
Collector-Base Breakdown Voltage V(BR)CBO IC=-0.1mA, IE=0 -300 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -300 - - V
hFE(1) VCE=-10V, IC=-1mA 30 - -
DC Current Gain
hFE(2) (Note) VCE=-10V, IC=-20mA 50 - 200
Collector-Emitter Saturation Voltage VCE(sat) IC=-20mA, IB=-2mA - - -0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=-20mA, IB=-2mA - - -1.2 V
Transition Frequency fT VCE=-10V, IC=-20mA 50 55 - MHz
Collector Output Capacitance Cob VCB=-20V, IE=0, f=1MHz - 5.5 6.0 pF
Note : hFE(1) Classification O:50 150, Y:100~200
2002. 11. 7 Revision No : 1 1/3
KTA1073T
I C - VCE (LOW VOLTAGE REGION) I C - VCE (LOW CURRENT REGION)
-100 -10
A
mA mA 2mA -80