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STP180N10F3
N-channel 100 V, 4.5 m 120 A STripFETTMIII Power MOSFET
,
TO-220
Features
RDS(on) TAB
Order codes VDSS ID
max.
STP180N10F3 100 V 5.1 m 120 A
Ultra low on-resistance
3
100% avalanche tested 1
2
Applications TO-220
High current switching applications
Description
This device is an N-channel enhancement mode
Power MOSFET produced using Figure 1. Internal schematic diagram
STMicroelectronics' STripFETTM III technology,
which is specifically designed to minimize on-
resistance and gate charge to provide superior
switching performance.
Table 1. Device summary
Order codes Marking Package Packaging
STP180N10F3 180N10F3 TO-220 Tube
July 2011 Doc ID 14933 Rev 4 1/13
www.st.com 13
Contents STP180N10F3
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
2/13 Doc ID 14933 Rev 4
STP180N10F3 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS=0) 100 V
VGS Gate-source voltage