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CEM0415
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY
FEATURES
150V, 4A, RDS(ON) = 85m @VGS = 10V.
RDS(ON) = 95m @VGS = 6V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
D D D D
Lead-free plating ; RoHS compliant. 8 7 6 5
Surface mount Package.
SO-8
1 2 3 4
1 S S S G
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 150 V
Gate-Source Voltage VGS