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CEP04N6/CEB04N6
CEF04N6
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY



FEATURES
Type VDSS RDS(ON) ID @VGS
CEP04N6 600V 2.4 4.2A 10V
CEB04N6 600V 2.4 4.2A 10V
CEF04N6 600V 2.4 4.2A d 10V


Super high dense cell design for extremely low RDS(ON). D

High power and current handing capability.
Lead-free plating ; RoHS compliant.



D G


G G
G D D
S S S
S
CEB SERIES CEP SERIES CEF SERIES
TO-263(DD-PAK) TO-220 TO-220F



ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Limit
Parameter Symbol Units
TO-220/263 TO-220F
Drain-Source Voltage VDS 600 V
Gate-Source Voltage VGS