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SEMICONDUCTOR KTC802E
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION. B
B1
FEATURES
High Current.
1 6 DIM MILLIMETERS
C
Low VCE(sat) . A _
1.6 + 0.05
A1
A
A1 _
1.0 + 0.05
: VCE(sat) 250mV at IC=200mA/IB=10mA. 2 5
C
B _
1.6 + 0.05
Complementary to KTA702E. B1 _
1.2 + 0.05
D
3 4 C 0.50
D _
0.2 + 0.05
H _
0.5 + 0.05
J _
0.12 + 0.05
P P
P 5
MAXIMUM RATINGS (Ta=25 )
H
CHARACTERISTIC SYMBOL RATING UNIT
J
Collector-Base Voltage VCBO 15 V
1. Q 1 EMITTER
Collector-Emitter Voltage VCEO 12 V 2. Q 1 BASE
3. Q 2 COLLECTOR
4. Q 2 EMITTER
Emitter-Base Voltage VEBO 6 V 5. Q 2 BASE
6. Q 1 COLLECTOR
IC 500 mA
Collector Current
ICP (Note) 1 A
TES6
Collector Power Dissipation PC * 200 mW
Junction Temperature Tj 150 EQUIVALENT CIRCUIT (TOP VIEW)
Storage Temperature Range Tstg -55 150 6 5 4
Note : Single pulse Pw=1mS.
* Total Rating.
Q1 Q2
1 2 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=15V, IE=0 - - 100 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=10 A 15 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA 12 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=10 A 6 - - V
DC Current Gain hFE VCE=2V, IC=10mA 270 - 680 -
Collector-Emitter Saturation Voltage VCE(sat) IC=200mA, IB=10mA - 90 250 mV
Transition Frequency fT VCE=2V, IC=10mA, fT=100MHz - 320 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 7.5 - pF
Marking
2002. 2. 20 Revision No : 1 1/3
KTC802E
2002. 2. 20 Revision No : 1 2/3
KTC802E
2002. 2. 20 Revision No : 1 3/3