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C1815
TRANSISTOR (NPN)
SOT-23
FEATURES
Power dissipation
1. BASE
MARKING : C1815=HF
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 150 mA
PC Collector Power Dissipation 200 mW
Tj Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC= 100uA, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 50 V
Collector cut-off current ICBO VCB=60V, IE=0 0.1 uA
Collector cut-off current ICEO VCE=50V, IB=0 0.1 uA
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 uA
DC current gain hFE VCE= 6V, IC= 2mA 130 400
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA 0.25 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB= 10mA 1 V
VCE=10V, IC= 1mA,
Transition frequency fT 80 MHz
f=30MHz
CLASSIFICATION OF hFE
Rank L H
Range 130-200 200-400
1
JinYu www.htsemi.com
semiconductor
Date:2011/05
C1815
Typical Characteristics
VCE(sat)/VBE(sat)-IC fT-Ic
2
JinYu www.htsemi.com
semiconductor
Date:2011/05