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DISCRETE SEMICONDUCTORS
DATA SHEET
BFS505
NPN 9 GHz wideband transistor
Product specification September 1995
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFS505
FEATURES PINNING
Low current consumption PIN DESCRIPTION
handbook, 2 columns 3
High power gain Code: N0
Low noise figure 1 base
High transition frequency 2 emitter
Gold metallization ensures 3 collector 1 2
excellent reliability
Top view MBC870
SOT323 envelope.
Fig.1 SOT323.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is intended for low power amplifiers,
oscillators and mixers particularly in
RF portable communication
equipment (cellular phones, cordless
phones, pagers) up to 2 GHz.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCES collector-emitter voltage RBE = 0 15 V
IC DC collector current 18 mA
Ptot total power dissipation up to Ts = 147 C; note 1 150 mW
hFE DC current gain IC = 5 mA; VCE = 6 V; Tj = 25 C 60 120 250
fT transition frequency IC = 5 mA; VCE = 6 V; f = 1 GHz; 9 GHz
Tamb = 25 C
GUM maximum unilateral power gain Ic = 5 mA; VCE = 6 V; f = 900 MHz; 17 dB
Tamb = 25 C
F noise figure Ic = 1.25 mA; VCE = 6 V; 1.2 1.7 dB
f = 900 MHz; Tamb = 25 C
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995 2
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFS505
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 20 V
VCES collector-emitter voltage RBE = 0 15 V
VEBO emitter-base voltage open collector 2.5 V
IC DC collector current 18 mA
Ptot total power dissipation up to Ts = 147 C; note 1 150 mW
Tstg storage temperature 65 +150 C
Tj junction temperature 175 C
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
Rth j-s thermal resistance from junction to up to Ts = 147 C; note 1 190 K/W
soldering point
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995 3
NXP Semiconductors Product specification
NPN 9 GHz wideband transistor BFS505
CHARACTERISTICS
Tj = 25 C, unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 6 V 50 nA
hFE DC current gain IC = 5 mA; VCE = 6 V 60 120 250
Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz 0.4 pF
Cc collector capacitance IE = ie = 0; VCB = 6 V; f = 1 MHz 0.4 pF
Cre feedback capacitance IC = 0; VCB = 0.5 V; f = 1 MHz 0.3 pF
fT transition frequency IC = 5 mA; VCE = 6 V; f = 1 GHz; 9 GHz
Tamb = 25 C
GUM maximum unilateral power gain IC = 5 mA; VCE = 6 V; f = 900 MHz; 17 dB
(note 1) Tamb = 25 C
IC = 5 mA; VCE = 6 V; f = 2 GHz; 10 dB
Tamb = 25 C
S212 insertion power gain IC = 5 mA; VCE = 6 V; f = 900 MHz; 13 14 dB
Tamb = 25 C
F noise figure s = opt; IC = 1.25 mA; VCE = 6 V; 1.2 1.7 dB
f = 900 MHz; Tamb = 25 C
s = opt; IC = 5 mA; VCE = 6 V; 1.6 2.1 dB
f = 900 MHz; Tamb = 25 C
s = opt; IC = 1.25 mA; VCE = 6 V; 1.9 dB
f = 2 GHz; Tamb = 25 C
PL1 output power at 1 dB gain Ic = 5 mA; VCE = 6 V; RL = 50 ; 4 dBm
compression f = 900 MHz; Tamb = 25 C
ITO third order intercept point note 2 10 dBm
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S 21
G UM = 10 log --------------------------------------------------------- dB.
2 2
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1