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PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode field-effect transistor
Rev. 02 -- 12 March 2001 Product specification
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOSTM1 technology.
Product availability:
PHP30NQ15T in SOT78 (TO-220AB)
PHB30NQ15T in SOT404 (D2-PAK).
2. Features
s Fast switching
s Low on-state resistance.
3. Applications
s DC to DC converters
s Switched mode power supplies.
c
4. Pinning information
c
Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
mb mb
2 drain (d) [1]
3 source (s) d
mb drain (d)
g
2
1 3 MBK116 MBB076 s
MBK106
1 2 3
SOT78 (TO-220AB) SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
1. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors PHP30NQ15T; PHB30NQ15T
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj = 25 to 175