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EMF23
Power management (dual transistors)
FEATURES
SOT-563
2SA1774 and DTC114E are housed independently in a package
Power management circuit
Power switching circuit in a single package
Mounting cost and area can be cut in half
1
MARKING: F23
TR1 MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -150 mA
PC Collector Power Dissipation 150 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
TR1 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Parameter Symbol Test conditions Min T yp Max Unit
Collector-base breakdown voltage V(BR)CBO IC=-50A,IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-50A,IC=0 -6 V
Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 A
DC current gain hFE VCE=-6V,IC=-1mA 180 390
Collector-emitter saturation voltage VCE(sat) IC=-50mA,IB=-5mA -0.5 V
Transition frequency fT VCE=-12V,IC=-2mA,f=100MHz 140 MHz
Collector output capacitance Cob VCB=-12V,IE=0,f=1MHz 5 pF
1
JinYu www.htsemi.com
semiconductor
Date:2011/ 05
EMF23
DTr2 Maximum ratings (Ta=25 )
Parameter Symbol Limits Unit
Supply voltage VCC 50 V
Input voltage VIN -10~40 V
IO 50
Output current mA
IC(MAX) 100
Power dissipation PC 150 mW
Junction temperature Tj 150
Storage temperature Tstg -55~150
DTr2 Electrical characteristics (Ta=25 )
Parameter Symbol Min. Typ Max. Unit Conditions
VI(off) 0.5 VCC=5V ,IO=100A
Input voltage V
VI(on) 3 VO=0.3V ,IO=10 mA
Output voltage VO(on) 0.3 V IO/II=10mA/0.5mA
Input current II 0.88 mA VI=5V
Output current IO(off) 0.5 A VCC=50V, VI=0
DC current gain GI 30 VO=5V ,IO=5mA
Input resistance R1 7 10 13 K
Resistance ratio R2/R1 0.8 1 1.2
Transition frequency fT 250 MHz VO=10V ,IO=-5mA,f=100MHz
2
JinYu www.htsemi.com
semiconductor
Date:2011/ 05