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BSN20
N-channel enhancement mode field-effect transistor
Rev. 03 -- 26 June 2000 Product specification




1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOSTM1 technology.

Product availability:
BSN20 in SOT23.


2. Features
s TrenchMOSTM technology
s Very fast switching
s Logic level compatible
s Subminiature surface mount package.


3. Applications
s Relay driver
c
s High speed line driver
c

s Logic level translator.


4. Pinning information
Table 1: Pinning - SOT23, simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
3 d
2 source (s)
3 drain (d)
g

03ab44
03ab30
1 2 s

SOT23 N-channel MOSFET



1. TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors BSN20
N-channel enhancement mode field-effect transistor


5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150