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SEMICONDUCTOR KTC2026
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
A C
FEATURES
DIM MILLIMETERS
Low Collector Saturation Voltage S
F
A _
10.0 + 0.3
P
B _
15.0 + 0.3
: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. E
C _
2.70 + 0.3
B
Complementary to KTA1046. D 0.76+0.09/-0.05
G
E _
3.2 + 0.2
F _
3.0 + 0.3
G _
12.0 + 0.3
H 0.5+0.1/-0.05
L L J _
13.6 + 0.5
R
K
K _
3.7 + 0.2
MAXIMUM RATING (Ta=25 ) L 1.2+0.25/-0.1
M
M 1.5+0.25/-0.1
J
CHARACTERISTIC SYMBOL RATING UNIT D D N _
2.54 + 0.1
P _
6.8 + 0.1
Collector-Base Voltage VCBO 60 V Q _
4.5 + 0.2
R _
2.6 + 0.2
N N H
Collector-Emitter Voltage VCEO 60 V S 0.5 Typ
Emitter-Base Voltage VEBO 7 V
Collector Current IC 3 A 1. BASE
1 2 3
Q
2. COLLECTOR
Base Current IB 0.5 A
3. EMITTER
Collector Power Ta=25