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AO4456
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
The AO4456 uses advanced trench technology with a
monolithically integrated Schottky diode to provide VDS (V) = 30V
excellent RDS(ON),and low gate charge. This device is ID =20A (VGS = 10V)
suitable for use as a low side FET in SMPS, load RDS(ON) < 4.6m (VGS = 10V)
switching and general purpose applications. Standard RDS(ON) < 5.6m (VGS = 4.5V)
Product AO4456 is Pb-free (meets ROHS & Sony
259 specifications). AO4456 is a Green Product
ordering option. AO4456 and AO4456 are electrically
identical.
D
S D
S D
S D
G D G
S
Absolute Maximum Ratings TA=25