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PMBT3904VS
40 V, 200 mA NPN/NPN switching transistor
Rev. 01 -- 8 July 2009 Product data sheet
1. Product profile
1.1 General description
NPN/NPN double switching transistor in a SOT666 ultra small and flat lead
Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number Package PNP/PNP NPN/PNP
NXP JEITA complement complement
PMBT3904VS SOT666 - PMBT3906VS PMBT3946VPN
1.2 Features
I Double general-purpose switching transistor
I Board-space reduction
I Ultra small and flat lead SMD plastic package
1.3 Applications
I General-purpose switching and amplification
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO collector-emitter voltage open base - - 40 V
IC collector current - - 200 mA
hFE DC current gain VCE = 1 V; 100 180 300
IC = 10 mA
NXP Semiconductors PMBT3904VS
40 V, 200 mA NPN/NPN switching transistor
2. Pinning information
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
1 emitter TR1
6 5 4 6 5 4
2 base TR1
3 collector TR2
TR2
4 emitter TR2 TR1
5 base TR2
1 2 3 1 2 3
6 collector TR1
sym020
3. Ordering information
Table 4. Ordering information
Type number Package
Name Description Version
PMBT3904VS - plastic surface-mounted package; 6 leads SOT666
4. Marking
Table 5. Marking codes
Type number Marking code
PMBT3904VS ZC
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
VCBO collector-base voltage open emitter - 60 V
VCEO collector-emitter voltage open base - 40 V
VEBO emitter-base voltage open collector - 6 V
IC collector current - 200 mA
ICM peak collector current single pulse; - 200 mA
tp 1 ms
IBM peak base current single pulse; - 100 mA
tp 1 ms
Ptot total power dissipation Tamb 25