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STN1NF10
N-channel 100V - 0.7 -1A SOT-223
STripFETTM II Power MOSFET
General features
Type VDSS RDS(on) ID
STN1NF10 100V <0.8 1A 2
Exceptional dv/dt capability 3
2
1
Description SOT-223
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
SizeTM" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility. Internal schematic diagram
Applications
Switching application
Order codes
Part number Marking Package Packaging
STN1NF10 N1NF10 SOT-223 Tape & reel
February 2007 Rev 3 1/12
www.st.com 12
Contents STN1NF10
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STN1NF10 Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 100 V
VGS Gate-source voltage