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2SC2785
TO-92S Transistor (NPN)
1. EMITTER
TO-92S
2. COLLECTOR
123 3. BASE
Features
High voltage VCEO:50V
Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA)
Complementary to 2SA1175 PNP transistor
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 0.1 A
Dimensions in inches and (millimeters)
PC Collector Power Dissipation 0.25 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100A, IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=60V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V, IC=0 0.1 A
hFE(1) VCE=6V, IC=1mA 110 600
DC current gain
hFE(2) VCE=6V, IC=0.1mA 50
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V
Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V
Base-emitter voltage VBE VCE=6V, IC=1mA 0.65 V
Transition frequency fT VCE=6V, IC=10mA 150 MHz
Collector output capacitance Cob VCB=6V, IE=0,f=1MHz 4 pF
Noise figure NF VCE=6V, Ic=0.1mA,f=1KHZ, Rg=2K 15 dB
CLASSIFICATION OF hFE(1)
Rank RF JF HF FF EF KF
Range 110-180 135-220 170-270 200-320 250-400 300-600
2SC2785
TO-92S Transistor (NPN)
Typical Characteristics
2SC2785
TO-92S Transistor (NPN)