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CEP3100
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY
FEATURES
30V, 47A,RDS(ON) = 12m @VGS = 10V.
RDS(ON) = 21m @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. D
Lead-free plating ; RoHS compliant.
TO-220 package.
G
G
D
S
CEP SERIES
TO-220 S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS