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SEMICONDUCTOR KTC3600S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR


VHF/UHF WIDE BAND AMPLIFIER APPLICATION.



FEATURES
E
Low Noise Figure, High Gain. L B L
2
NF=1.1dB, |S21e| =13dB (f=1GHz). DIM MILLIMETERS
A _
2.93 + 0.20
B 1.30+0.20/-0.15
C 1.30 MAX




D
2 3 D 0.40+0.15/-0.05




A

G
E 2.40+0.30/-0.20




H
1 G 1.90
MAXIMUM RATING (Ta=25 ) H 0.95
J 0.13+0.10/-0.05
CHARACTERISTIC SYMBOL RATING UNIT K 0.00 ~ 0.10
L 0.55
P P
Collector-Base Voltage VCBO 20 V M 0.20 MIN
N 1.00+0.20/-0.10




N
C
Collector-Emitter Voltage VCEO 10 V P 7




J
K
Emitter-Base Voltage VEBO 1.5 V M


Collector Current IC 40 mA 1. EMITTER
2. BASE
Collector Power Dissipation PC 150 mW
3. COLLECTOR
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 SOT-23



Marking
h FE Rank Lot No.


Type Name
R



ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=10V, IE=0 - - 1 A
Emitter Cut-off Current IEBO VEB=1V, IC=0 - - 1 A
DC Current Gain hFE (Note1) VCE=8V, IC=20mA 50 - 250
Collector Output Capacitance Cob - 0.7 - pF
VCB=10V, IE=0, f=1MHz (Note2)
Reverse Transfer Capacitance Cre - 0.5 0.95 pF
Transition Frequency fT VCE=8V, IC=20mA 7 10 - GHz
|S21e|2 (1) VCE=8V, IC=20mA, f=1GHz 10 13 - dB
Insertion Gain
|S21e|2 (2) VCE=8V, IC=20mA, f=2GHz - 7 - dB
NF (1) VCE=8V, IC=5mA, f=1GHz - 1.1 2.5 dB
Noise Figure
NF (2) VCE=8V, IC=5mA, f=2GHz - 1.7 - dB
Note 1 : hFE Classification H:50~100, J:80~160, K:125~250
Note 2 : Cre is measured by 3 terminal method with capacitance bridge.




2007. 8. 22 Revision No : 0 1/5
KTC3600S


TYPICAL CHARACTERISTICS (Ta=25 C)

h FE - I C C ob , C re - VCB




REVERSE TRANSFER CAPACITANCE C re (pF)
300 5




OUTPUT CAPACITANCE C ob (pF)
f=1MHz
200 3 Ta=25 C
DC CURRENT GAIN h FE




100
70 1 C ob

50 C re
0.5
30
0.3

VCE=8V
Ta=25 C
10 0.1
1 2 3 5 7 10 20 30 50 0.1 0.3 0.5 1 3 5 10
COLLECTOR CURRENT I C (mA) COLLECTOR-BASE VOLTAGE VCB (V)




2
f T - IC S 2le - IC
12 12
TRANSITION FREQUENCY f T (GHz)




(dB)




VCE=8V
Ta=25 C
10 10
2
INSERTION GAIN S 2le




8 8

6 6

4 4

2 VCE=8V
2
f=2GHz
Ta=25 C
0 0
1 3 5 7 10 30 1 3 5 7 10 30

COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT I C (mA)




2
S 2le - f NF - I C
30 5
(dB)




VCE=8V
25 Ta=25 C
NOISE FIGURE NF (dB)
2




4
S 2le




20
3
INSERTION GAIN




15 Hz
f=2G
2
10
Hz
f=1G
VCE=8V 1
5
IC=20mA
Ta=25 C
0 0
0.1 0.2 0.3 0.5 0.7 1 2 3 1 2 3 5 7 10 20 30 50

FREQUENCY f (GHz) COLLECTOR CURRENT IC (mA)




2007. 8. 22 Revision No : 0 2/5
KTC3600S


2
S 2le - VCE Pc - Ta




COLLECTOR POWER DISSIPATION P C (mW)
10 300
(dB)




8
2
INSERTION GAIN S 2le




200
6


4
100
2 IC =20mA
f=2GHz
Ta=25 C
0 0
0 2 4 6 8 10 0 50 100 150

COLLECTOR-EMITTER VOLTGE VCE (V) AMBIENT TEMPERATURE Ta ( C)



S-PARAMETER
(VCE=8V, IC=5mA, ZO=50 , Ta=25 )
Frequency |S11| |S21| |S12| |S22|
(MHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang.
200 0.683 -50.1 10.186 138.3 0.049 62.0 0.773 -30.0
400 0.462 -86.9 7.472 114.6 0.071 54.3 0.556 -39.6
600 0.343 -113.1 5.618 100.9 0.086 53.8 0.448 -41.7
800 0.282 -133.6 4.407 91.7 0.101 55.3 0.392 -41.6
1000 0.249 -151.0 3.663 84.7 0.115 57.2 0.360 -41.7
1200 0.236 -166.6 3.128 78.7 0.131 58.9 0.339 -41.7
1400 0.233 179.7 2.759 73.1 0.150 60.1 0.330 -42.8
1600 0.234 168.3 2.457 68.2 0.168 60.0 0.319 -45.0
1800 0.238 158.6 2.224 63.4 0.185 60.0 0.311 -47.9
2000 0.251 149.6 2.038 59.4 0.203 60.4 0.302 -50.2



(VCE=8V, IC=20mA, ZO=50 , Ta=25 )
Frequency |S11| |S21| |S12| |S22|
(MHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang.
200 0.319 -91.9 18.338 116.7 0.033 65.3 0.494 -43.5
400 0.213 -134.2 10.303 99.2 0.054 68.9 0.312 -42.4
600 0.185 -160.0 7.111 90.3 0.076 70.8 0.258 -37.6
800 0.176 -178.2 5.415 84.3 0.098 71.2 0.236 -34.3
1000 0.174 167.8 4.400 79.2 0.120 71.1 0.228 -32.0
1200 0.178 156.8 3.712 74.8 0.143 70.3 0.226 -31.5
1400 0.186 147.5 3.236 70.3 0.168 68.7 0.226 -32.8
1600 0.194 139.7 2.874 66.3 0.190 66.6 0.223 -35.9
1800 0.199 133.7 2.583 62.6 0.211 64.9 0.216 -39.0
2000 0.215 127.8 2.369 58.8 0.232 63.5 0.211 -41.9



2007. 8. 22 Revision No : 0 3/5
KTC3600S



S11e S21e
VCE =8V VCE =8V
I C =5mA I C =5mA
Ta=25 C Ta=25 C
(UNIT : ) j50 90
10
120 60

j25 j100 8
0.4
f=0.2GHz
6
j150 150 1.0 30
0.8

4 1.2
j10 j250
2 1.6
2.0
2.0
10 25 50 100 250
0 1.6 _
+ 180 0
1.2 10 8 6 4 2 0

0.8
-j10 -j250

0.4 f=0.2GHz -j150 -150 -30

-j25
-j100
-120 -60
-j50 -90




S12e S22e
VCE =8V VCE =8V
I C =5mA I C =5mA
90 j50
Ta=25 C Ta=25 C
0.25
120 60 (UNIT : )

0.20 j25 j100
2.0
0.15
150 1.6 30 j150
1.2
0.10
0.8 j10 j250
0.05 0.4
f=0.2GHz
_ 10 25 50 100 250
+ 180 0 0 0
0.05 0.10 0.15 0.20 0.25
0.8
1.6 0.4
1.2
-j10 2.0 f=0.2GHz -j250


-150 -30 -j150

-j25
-j100
-120 -60
-90 -j50




2007. 8. 22 Revision No : 0 4/5
KTC3600S



S21e
S11e
VCE =8V
VCE =8V I C =20mA
I C =20mA Ta=25 C
j50
Ta=25 C 90
(UNIT : ) 20
120 60
j25 j100 f=0.2GHz
16


j150 12
150 30
0.4
8
j10 j250 0.6
2.0 1.2
4 1.6
1.6 2.0
10 25 1.2 50 100 250
0 0.8 _
+ 180 0 0
20 16 12 8 4
0.4

-j10 -j250
f=0.2GHz

-j150
-150 -30

-j25
-j100

-120 -60
-j50
-90




S12e S22e
VCE =8V VCE =8V
I C =20mA I C =20mA
90 j50
Ta=25 C 0.25 Ta=25 C
120 60 (UNIT : )
0.20 2.0 j25 j100
1.6
0.15
150 1.2 30 j150
0.10 0.8
j10 j250
0.05 0.4
f=0.2GHz
_ 10 25 50 100 250
+ 180 0 0 0 1.2 0.8
0.05 0.10 0.15 0.20 0.25
1.6 0.4
2.0
f=0.2GHz
-j10 -j250


-150 -30 -j150

-j25
-j100
-120 -60
-90 -j50




2007. 8. 22 Revision No : 0 5/5