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BC856BWT1 Series,
BC857BWT1 Series,
BC858AWT1 Series
General Purpose
Transistors
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PNP Silicon
COLLECTOR
These transistors are designed for general purpose amplifier 3
applications. They are housed in the SC- -70/SOT- -323 which is
designed for low power surface mount applications. 1
BASE
Features
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS 2
Compliant EMITTER
3
SC-
-70/SOT--323
CASE 419
MAXIMUM RATINGS (TA = 25C unless otherwise noted) 1 STYLE 3
2
Rating Symbol Value Unit
Collector-Emitter Voltage BC856 VCEO --65 V
BC857 --45 MARKING DIAGRAM
BC858 --30
Collector-Base Voltage BC856 VCBO --80 V
BC857 --50 xx M G
BC858 --30 G
Emitter--Base Voltage VEBO --5.0 V 1
Collector Current -- Continuous IC --100 mAdc
xx = Specific Device Code
THERMAL CHARACTERISTICS M = Date Code*
Characteristic Symbol Max Unit G = Pb--Free Package
(Note: Microdot may be in either location)
Total Device Dissipation FR-- 5 Board, PD 150 mW *Date Code orientation may vary depending
(Note 1) TA = 25C upon manufacturing location.
Thermal Resistance, RJA 883 C/W
Junction--to--Ambient ORDERING INFORMATION
Junction and Storage Temperature TJ, Tstg -- 55 to +150 C See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR--5 = 1.0 x 0.75 x 0.062 in.
Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:
October, 2010 - Rev. 2
- BC856BWT1/D
BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector -- Emitter Breakdown Voltage BC856 Series V(BR)CEO --65 -- -- V
(IC = --10 mA) BC857 Series --45 -- --
BC858 Series --30 -- --
Collector -- Emitter Breakdown Voltage BC856 Series V(BR)CES --80 -- -- V
(IC = --10 mA, VEB = 0) BC857B Only --50 -- --
BC858 Series --30 -- --
Collector -- Base Breakdown Voltage BC856 Series V(BR)CBO --80 -- -- V
(IC = --10 mA) BC857 Series --50 -- --
BC858 Series --30 -- --
Emitter -- Base Breakdown Voltage BC856 Series V(BR)EBO --5.0 -- -- V
(IE = --1.0 mA) BC857 Series --5.0 -- --
BC858 Series --5.0 -- --
Collector Cutoff Current (VCB = --30 V) ICBO -- -- --15 nA
Collector Cutoff Current (VCB = --30 V, TA = 150C) -- -- --4.0 mA
ON CHARACTERISTICS
DC Current Gain BC856A, BC585A hFE -- 90 -- --
(IC = --10 mA, VCE = --5.0 V) BC856B, BC857B, BC858B -- 150 --
BC857C -- 270 --
(IC = --2.0 mA, VCE = --5.0 V) BC856A, BC858A 125 180 250
BC856B, BC857B, BC858B 220 290 475
BC857C 420 520 800
Collector -- Emitter Saturation Voltage VCE(sat) V
(IC = --10 mA, IB = --0.5 mA) -- -- --0.3
(IC = --100 mA, IB = --5.0 mA) -- -- --0.65
Base -- Emitter Saturation Voltage VBE(sat) V
(IC = --10 mA, IB = --0.5 mA) -- --0.7 --
(IC = --100 mA, IB = --5.0 mA) -- --0.9 --
Base -- Emitter On Voltage VBE(on) V
(IC = --2.0 mA, VCE = --5.0 V) --0.6 -- --0.75
(IC = --10 mA, VCE = --5.0 V) -- -- --0.82
SMALL- SIGNAL CHARACTERISTICS
-
Current -- Gain -- Bandwidth Product fT 100 -- -- MHz
(IC = --10 mA, VCE = --5.0 Vdc, f = 100 MHz)
Output Capacitance Cob -- -- 4.5 pF
(VCB = --10 V, f = 1.0 MHz)
Noise Figure NF -- -- 10 dB
(IC = --0.2 mA, VCE = --5.0 Vdc, RS = 2.0 k,
f = 1.0 kHz, BW = 200 Hz)
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BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series
BC857/BC858
2.0 --1.0
--0.9 TA = 25C
hFE , NORMALIZED DC CURRENT GAIN
1.5 VCE = --10 V
TA = 25C --0.8 VBE(sat) @ IC/IB = 10
1.0 --0.7
V, VOLTAGE (VOLTS)
--0.6 VBE(on) @ VCE = --10 V
0.7
--0.5
0.5 --0.4
--0.3
0.3 --0.2
--0.1 VCE(sat) @ IC/IB = 10
0.2 0
--0.2 --0.5 --1.0 --2.0 --5.0 --10 --20 --50 --100 --200 --0.1 --0.2 --0.5 --1.0 --2.0 --5.0 --10 --20 --50 --100
IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain Figure 2. "Saturation" and "On" Voltages
--2.0 1.0
VB , TEMPERATURE COEFFICIENT (mV/ C)
VCE , COLLECTOR--EMITTER VOLTAGE (V)
TA = 25C --55C to +125C
1.2
--1.6
1.6
--1.2
2.0
IC = IC = --50 mA IC = --200 mA
--0.8
--10 mA
2.4
IC = --100 mA
IC = --20 mA
--0.4
2.8
0
--0.02 --0.1 --1.0 --10 --20 --0.2 --1.0 --10 --100
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region Figure 4. Base-
-Emitter Temperature Coefficient
f T, CURRENT--GAIN -- BANDWIDTH PRODUCT (MHz)
10 400
Cib 300
7.0
TA = 25C 200
5.0
C, CAPACITANCE (pF)
150 VCE = --10 V
TA = 25C
Cob 100
3.0
80
60
2.0
40
30
1.0 20
--0.4 --0.6 --1.0 --2.0 --4.0 --6.0 --10 --20 --30 --40 --0.5 --1.0 --2.0 --3.0 --5.0 --10 --20 --30 --50
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances Figure 6. Current-
-Gain - Bandwidth Product
-
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3
BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series
BC856
--1.0
hFE , DC CURRENT GAIN (NORMALIZED)
TJ = 25C
VCE = --5.0 V
TA = 25C --0.8
VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
2.0
--0.6
VBE @ VCE = --5.0 V
1.0
--0.4
0.5
--0.2
0.2 VCE(sat) @ IC/IB = 10
0
--0.1 --0.2 --1.0 --2.0 --5.0 --10 --20 --50 --100 --200 --0.2 --0.5 --1.0 --2.0 --5.0 --10 --20 --50 --100 --200
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain Figure 8. "On" Voltage
--2.0 --1.0
VCE , COLLECTOR--EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)
--1.6 --1.4
IC = --20 mA --50 mA --100 mA --200 mA
--1.2 --10 mA --1.8
VB for VBE
--55C to 125C
--0.8 --2.2
--0.4 --2.6
TJ = 25C
0 --3.0
--0.02 --0.05 --0.1 --0.2 --0.5 --1.0 --2.0 --5.0 --10 --20 --0.2 --0.5 --1.0 --2.0 --5.0 --10 --20 --50 --100 --200
IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region Figure 10. Base-
-Emitter Temperature Coefficient
40
f T, CURRENT--GAIN -- BANDWIDTH PRODUCT
VCE = --5.0 V
TJ = 25C 500
20 Cib
C, CAPACITANCE (pF)
200
10 100
8.0
6.0 50
Cob
4.0
20
2.0
--0.1 --0.2 --0.5 --1.0 --2.0 --5.0 --10 --20 --50 --100 --1.0 --10 --100
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance Figure 12. Current-
-Gain - Bandwidth Product
-
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BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series
1.0
0.7
D = 0.5
0.5
RESISTANCE (NORMALIZED)
0.2
r(t), TRANSIENT THERMAL
0.3
0.2 SINGLE PULSE
0.05 ZJC(t) = r(t) RJC
0.1
0.1 RJC = 83.3C/W MAX
P(pk)
0.07 SINGLE PULSE ZJA(t) = r(t) RJA
RJA = 200C/W MAX
0.05 t1
D CURVES APPLY FOR POWER
0.03 t2 PULSE TRAIN SHOWN
0.02 DUTY CYCLE, D = t1/t2 READ TIME AT t1
TJ(pk) -- TC = P(pk) RJC(t)
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)
Figure 13. Thermal Response
--200 The safe operating area curves indicate IC- CE lim-
-V
1s 3 ms its of the transistor that must be observed for reliable oper-
--100
IC, COLLECTOR CURRENT (mA)
ation. Collector load lines for specific circuits must fall
TA = 25C TJ = 25C below the limits indicated by the applicable curve.
--50
The data of Figure 14 is based upon TJ(pk) = 150C; TC
or TA is variable depending upon conditions. Pulse curves
BC858 are valid for duty cycles to 10% provided TJ(pk) 150C.
BC857 TJ(pk) may be calculated from the data in Figure 13. At
--10
BC856 high case or ambient temperatures, thermal limitations
--5.0 BONDING WIRE LIMIT will reduce the power that can be handled to values less
THERMAL LIMIT than the limitations imposed by the secondary breakdown.
SECOND BREAKDOWN LIMIT
--2.0
--1.0 --5.0 --10 --30 --45 --65 --100
VCE, COLLECTOR--EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
ORDERING INFORMATION
Device Marking Package Shipping
BC856BWT1G SC--70/SOT--323
3B 3,000 / Tape & Reel
(Pb--Free)
BC857BWT1G SC--70/SOT--323
3F 3,000 / Tape & Reel
(Pb--Free)
BC857CWT1G SC--70/SOT--323
3G 3,000 / Tape & Reel
(Pb--Free)
BC858AWT1G SC--70/SOT--323
3J 3,000 / Tape & Reel
(Pb--Free)
BC858BWT1G SC--70/SOT--323
3K 3,000 / Tape & Reel
(Pb--Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series
PACKAGE DIMENSIONS
SC-
-70 (SOT--323)
CASE 419--04
ISSUE N
NOTES:
D 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
e1 2. CONTROLLING DIMENSION: INCH.
MILLIMETERS INCHES
3 DIM MIN NOM MAX MIN NOM MAX
A 0.80 0.90 1.00 0.032 0.035 0.040
HE E A1 0.00 0.05 0.10 0.000 0.002 0.004
1 2 A2 0.70 REF 0.028 REF
b 0.30 0.35 0.40 0.012 0.014 0.016
c 0.10 0.18 0.25 0.004 0.007 0.010
D 1.80 2.10 2.20 0.071 0.083 0.087
b E 1.15 1.24 1.35 0.045 0.049 0.053
e 1.20 1.30 1.40 0.047 0.051 0.055
e e1 0.65 BSC 0.026 BSC
L 0.20 0.38 0.56 0.008 0.015 0.022
HE 2.00 2.10 2.40 0.079 0.083 0.095
STYLE 3:
c
A A2 PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.05 (0.002) L
A1
SOLDERING FOOTPRINT*
0.65
0.65 0.025
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1 inches
mm
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent
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