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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV)

DC-DC Converter, Relay Drive and Motor Drive
Applications Unit: mm

2.5 V gate drive
Low drain-source ON resistance : RDS (ON) = 0.29 (typ.)
High forward transfer admittance : |Yfs| = 3.0 S (typ.)
Low leakage current : IDSS = 100