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SEMICONDUCTOR KF4N20LD/I
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR

General Description
KF4N20LD

This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
A K DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for LED Lighting and C D L
A _
6.60 + 0.20
B _
6.10 + 0.20
switching mode power supplies. C _
5.34 + 0.30
D _
0.70 + 0.20
B E _
2.70 + 0.15
_
FEATURES F 2.30 + 0.10
G 0.96 MAX
VDSS(Min.)= 200V, ID= 3.6A H
H 0.90 MAX
J J _
1.80 + 0.20
E
Drain-Source ON Resistance : RDS(ON)=1.15 (max) @VGS =10V G N K _
2.30 + 0.10
L 0.50 +_ 0.10
Qg(typ.) =2.9nC F F M M _
0.50 + 0.10
N 0.70 MIN
Vth(Max.)= 2V

1 2 3
MAXIMUM RATING (Tc=25 ) 1. GATE
2. DRAIN
CHARACTERISTIC SYMBOL RATING UNIT 3. SOURCE


Drain-Source Voltage VDSS 200 V
Gate-Source Voltage VGSS 20 V
@TC=25 3.6 DPAK (1)
ID
Drain Current @TC=100 2.2 A
Pulsed (Note1) IDP 7*
Single Pulsed Avalanche Energy
EAS 52 mJ
(Note 2)
Repetitive Avalanche Energy KF4N20LI
EAR 3 mJ A
(Note 1) H
C J
Peak Diode Recovery dv/dt
D
dv/dt 5.5 V/ns
(Note 3)
Drain Power TC=25 31 W
B




DIM MILLIMETERS
PD A _
6.6 + 0.2
Dissipation Derate above25 0.25 W/ _
6.1 + 0.2
M B
K




C _
5.34 + 0.3
Maximum Junction Temperature Tj 150 P
D _
0.7 + 0.2
N
E _
9.3 +0.3
Storage Temperature Range Tstg -55 150
E




F _
2.3 + 0.2
G _
0.76 + 0.1
Thermal Characteristics G H _
2.3 + 0.1
L J _
0.5 + 0.1
Thermal Resistance, Junction-to-Case RthJC 4.0 /W F F
K _
1.8 + 0.2
Thermal Resistance, Junction-to- L _
0.5 + 0.1
RthJA 110 /W M _
1.0 + 0.1
Ambient 1 2 3 N 0.96 MAX
* : Drain current limited by maximum junction temperature. 1. GATE P _
1.02 + 0.3
2. DRAIN
3. SOURCE




PIN CONNECTION
IPAK(1)




2012. 1. 18 Revision No : 1 1/6
KF4N20LD/I

ELECTRICAL CHARACTERISTICS (Tc=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT

Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 200 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.2 - V/
Drain Cut-off Current IDSS VDS=200V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 - 2.0 V
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
VGS=10V, ID=1.8A - 0.85 1.15
Drain-Source ON Resistance RDS(ON)
VGS=5V, ID=1.8A 0.89 1.20
Dynamic
Total Gate Charge Qg - 2.9 3.8
VDS=160V, ID=3.6A
Gate-Source Charge Qgs - 0.6 - nC
VGS=5V (Note4,5)
Gate-Drain Charge Qgd - 2.2 -
Turn-on Delay time td(on) - 10 -
VDD=100V, ID=3.6A
Turn-on Rise time tr - 20 -
RG=25 (Note4,5) ns
Turn-off Delay time td(off) - 15 -
VGS=5V
Turn-off Fall time tf - 15 -
Input Capacitance Ciss - 170 220
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 25 - pF
Reverse Transfer Capacitance Crss - 4.0 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 1
VGS Pulsed Source Current ISP - - 4
Diode Forward Voltage VSD IS=3.6A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=3.6A, VGS=0V, - 100 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ - 0.30 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 78mH, IS=1A, VDD=50V, RG = 25 , Starting Tj = 25 .
Note 3) IS 2A, dI/dt 300A/ , VDD BVDSS, Starting Tj = 25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking


KF4N20 KF4N20
LD LI




2012. 1. 18 Revision No : 1 2/6
KF4N20LD/I




VGS = 3V




0 2 4 6 8




3.0

2.5

2.0

1.5

1.0

0.5


6




2012. 1. 18 Revision No : 1 3/6
KF4N20LD/I


Fig 7. C - VDS Fig8. Qg- VGS

1000 12
ID=4A




Gate - Source Voltage VGS (V)
10
Ciss VDS = 40V
Capacitance (pF)




100 8

6
Coss VDS = 160V
10 4

Crss 2

1 0
0 5 10 15 20 25 30 35 40 0 1 2 3 4 5 6 7 8

Gate - Charge Qg (nC)
Drain - Source Voltage VDS (V)


Fig9. Safe Operation Area Fig10. ID - Tj

Operation in this
5
area is limited by RDS(ON)
10 4
Drain Current ID (A)




Drain Current ID (A)



10