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SEMICONDUCTOR BC638
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH CURRENT TRANSISTORS.
B C
FEATURES
Complementary to BC637.
A
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX
MAXIMUM RATING (Ta=25 )
J
D 0.45
E 1.00
CHARACTERISTIC SYMBOL RATING UNIT F 1.27
G 0.85
Collector-Base Voltage VCBO -60 V H 0.45
H J _
14.00 + 0.50
Collector-Emitter Voltage VCEO -60 V F F K 0.55 MAX
L 2.30
M 0.45 MAX
Emitter-Base Voltage VEBO -5 V
N 1.00
C
1 2 3
L
Collector Current IC -500 mA
M
1. EMITTER
Collector Power Dissipation PC 625 mW 2. COLLECTOR
3. BASE
Junction Temperature Tj 150
Storage Temperature Tstg -55 150
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -100 nA
Collector-Emitter Breakdown Voltage * V(BR)CEO IC=-10mA, IB=0 -60 - - V
Collector-Base Breakdown Voltage V(BR)CBO IC=-100 A, IE=0 -60 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -5.0 - - V
DC Current Gain hFE VCE=-2V, IC=-150mA -40 - 160
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -0.5 V
Base-Emitter Voltage VBE VCE=-2V, IC=-500mA - - -1.0 V
Transition Frequency fT VCE=-2V, IC=-50mA, f=100MHz - 150 - MHz
Input Capacitance Cib VEB=-0.5V, IC=0, f=1MHz - 50 - pF
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 9.0 - pF
* Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
2000. 10. 2 Revision No : 0 1/1