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BCP68T1G

NPN Silicon
Epitaxial Transistor
This NPN Silicon Epitaxial Transistor is designed for use in low
voltage, high current applications. The device is housed in the
SOT- -223 package, which is designed for medium power surface
mount applications. http://onsemi.com

Features
High Current: IC = 1.0 A MEDIUM POWER NPN SILICON
The SOT--223 Package Can Be Soldered Using Wave or Reflow HIGH CURRENT TRANSISTOR
SOT--223 package ensures level mounting, resulting in improved SURFACE MOUNT
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
COLLECTOR 2,4
the possibility of damage to the die
The PNP Complement is BCP69T1
BASE
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS 1
Compliant
EMITTER 3

MAXIMUM RATINGS (TC = 25C unless otherwise noted)
MARKING
Rating Symbol Value Unit DIAGRAM
Collector--Emitter Voltage VCEO 20 Vdc
Collector--Base Voltage VCBO 25 Vdc 4 SOT-
-223 AYW
Emitter--Base Voltage VEBO 5.0 Vdc 1 CASE 318E CA G
2 STYLE 1 G
Collector Current IC 1.0 Adc 3
Total Power Dissipation @ TA = 25C PD 1.5 W
(Note 1)
Derate above 25C 12 mW/C
CA = Specific Device Code
Operating and Storage Temperature TJ, Tstg -- 65 to 150 C
A = Assembly Location
Range
Y = Year
THERMAL CHARACTERISTICS W = Work Week
G = Pb--Free Package
Characteristic Symbol Max Unit
(Note: Microdot may be in either location)
Thermal Resistance, RJA 83.3 C/W
Junction--to--Ambient (Surface Mounted) ORDERING INFORMATION
Lead Temperature for Soldering, TL 260 C
0.0625 in from case Device Package Shipping
Time in Solder Bath 10 Sec
BCP68T1G SOT--223 1000/Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum (Pb--Free)
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the BCP68T3G SOT--223 4000/Tape & Reel
Recommended Operating Conditions may affect device reliability. (Pb--Free)
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.




Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:
September, 2010 - Rev. 6
- BCP68T1/D
BCP68T1G

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector--Emitter Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CES 25 -- -- Vdc
Collector--Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 20 -- -- Vdc
Emitter--Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 -- -- Vdc
Collector--Base Cutoff Current (VCB = 25 Vdc, IE = 0) ICBO -- -- 10 mAdc
Emitter--Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO -- -- 10 mAdc
ON CHARACTERISTICS
DC Current Gain hFE --
(IC = 5.0 mAdc, VCE = 10 Vdc) 50 -- --
(IC = 500 mAdc, VCE = 1.0 Vdc) 85 -- 375
(IC = 1.0 Adc, VCE = 1.0 Vdc) 60 -- --
Collector--Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) -- -- 0.5 Vdc
Base--Emitter On Voltage (IC = 1.0 Adc, VCE = 1.0 Vdc) VBE(on) -- -- 1.0 Vdc
DYNAMIC CHARACTERISTICS
Current--Gain -- Bandwidth Product fT -- 60 -- MHz
(IC = 10 mAdc, VCE = 5.0 Vdc)


TYPICAL ELECTRICAL CHARACTERISTICS
f T, CURRENT-GAIN-BANDWIDTH PRODUCT (MHz)


300


200
300 TJ = 125C
hFE , DC CURRENT GAIN




200
= 25C
100 100
= -- 55C
70 VCE = 10 V
TJ = 25C
50 f = 30 MHz
VCE = 1.0 V

10 30
1.0 10 100 1000 10 100 200 1000
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain Figure 2. Current-Gain-Bandwidth Product




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BCP68T1G

TYPICAL ELECTRICAL CHARACTERISTICS
1.0 80
TJ = 25C
TJ = 25C
0.8 VBE(sat) @ IC/IB = 10 70




Cib, CAPACITANCE (pF)
V, VOLTAGE (VOLTS)




0.6 VBE(on) @ VCE = 1.0 V 60


0.4 50


0.2 40
VCE(sat) @ IC/IB = 10

0 30
1.0 10 100 1000 0 1.0 2.0 3.0 4.0 5.0
IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS)

Figure 3. "On" Voltage Figure 4. Capacitance


25 -- 0.8

TJ = 25C RVB, TEMPERATURE COEFFICIENT (mV/C)
--1.2
20
C ob, CAPACITANCE (pF)




--1.6
15 RVB for VBE

-- 2.0

10
-- 2.4


5.0 -- 2.8
0 5.0 10 15 20 1.0 10 100 1000
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 5. Capacitance Figure 6. Base-Emitter Temperature Coefficient


1.0
TJ = 25C
VCE , COLLECTOR VOLTAGE (V)




0.8


0.6 = 1000 mA


0.4 I C = 10 mA = 50 mA = 100 mA


0.2
= 500 mA

0
0.01 0.1 1.0 10 100
IB, BASE CURRENT (mA)

Figure 7. Saturation Region




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BCP68T1G

PACKAGE DIMENSIONS


SOT-
-223 (TO--261)
CASE 318E--04
ISSUE N


D
b1 NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
2. CONTROLLING DIMENSION: INCH.
4 MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
HE E A 1.50 1.63 1.75 0.060 0.064 0.068
1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004
b 0.60 0.75 0.89 0.024 0.030 0.035
b1 2.90 3.06 3.20 0.115 0.121 0.126
c 0.24 0.29 0.35 0.009 0.012 0.014
b D 6.30 6.50 6.70 0.249 0.256 0.263
E 3.30 3.50 3.70 0.130 0.138 0.145
e1 e 2.20 2.30 2.40 0.087 0.091 0.094
e e1 0.85 0.94 1.05 0.033 0.037 0.041
L 0.20 ------ ------ 0.008 ------ ------
C L1 1.50 1.75 2.00 0.060 0.069 0.078
HE 6.70 7.00 7.30 0.264 0.276 0.287
A 0 -- 10 0 -- 10
0.08 (0003) STYLE 1:
A1 L PIN 1. BASE
L1
2. COLLECTOR
3. EMITTER
4. COLLECTOR

SOLDERING FOOTPRINT*
3.8
0.15

2.0
0.079




6.3
2.3 2.3
0.248
0.091 0.091



2.0
0.079


1.5 SCALE 6:1 inches
mm
0.059

*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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