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Philips Semiconductors Product specification

TrenchMOSTM transistor PHB125N06T
Standard level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope VDS Drain-source voltage 55 V
suitable for surface mounting. Using ID Drain current (DC)1 75 A
'trench' technology the device Ptot Total power dissipation 250 W
features very low on-state resistance Tj Junction temperature 175