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BCX55
NPN Transistors
Elektronische Bauelemente Plastic-Encapsulate Transistors
RoHS Compliant Product

1
2 SOT-89
3

1.BASE
4.4~4.6
2.COLLECTOR
1.4~1.8
1.4~1.6
3.EMITTER
Features

3.94~4.25

2.3~2.6
Power dissipation 0.36~0.56

PCM: 0.5 W (Tamb=25oC)
Collector current 0.32~0.52
0.35~0.44

0.9~1.1
1.5Ref.
ICM: 1 A
2.9~3.1
Collector-base voltage
V(BR)CBO: 60 V
Dimensision in Millimeter

Operating and storage junction temperature range

TJ, Tstg: -55 oC to +150oC

o
ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT

Collector-base breakdown voltage V(BR)CBO Ic=100