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CED16N10L/CEU16N10L
N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY

FEATURES

100V, 13.3A, RDS(ON) = 115m @VGS = 10V.

RDS(ON) = 125m @VGS = 5V.

Super high dense cell design for extremely low RDS(ON).
D
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.

G
D

G G
D
S S
CEU SERIES CED SERIES
TO-252(D-PAK) TO-251(I-PAK) S

ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS