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BUT70
HIGH POWER NPN SILICON TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s NPN TRANSISTOR
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
s VERY LOW SATURATION VOLTAGE AND
HIGH GAIN
APPLICATION
s SWITCHING REGULATORS 3
2
s MOTOR CONTROL
1
s HIGH FREQUENCY AND EFFICENCY
CONVERTERS
TO-218
DESCRIPTION
The BUT70 is a Multiepitaxial planar NPN
transistor in TO-218 plastic package.
It's intented for use in high frequency and
efficiency converters such us motor controllers
and industrial equipment. INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CEV Collector-emitter Voltage (V BE = -1.5V) 200 V
V CEO Collector-emitter Voltage (I B = 0) 125 V
V EBO Emitter-Base Voltage (I C = 0) 7 V
I E(RMS) Emitter Current 40 A
I EM Emitter Peak Current 120 A
IB Base Current 8 A
I BM Base Peak Current 24 A
P tot Total Power Dissipation at T case < 25 o C 200 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max Operating Junction Temperature 150 C
July 1997 1/4
BUT70
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 0.63 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CER Collector Cut-off V CE = V CEV 1 mA
o
Current (R BE = 5) V CE = V CEV T c = 100 C 5 mA
I CEV Collector Cut-off V CE = V CEV V BE = -1.5V 1 mA
o
Current V CE = V CEV V BE = - 1.5V T C =100 C 4 mA
I EBO Emitter Cut-off V EB = - 5 V 1 mA
Current (I C = 0)
V CEO(sus) Collector-Emitter I C = 0.2A 125 V
Sustaining Voltage L = 25 mH
V EBO Emitter-base I E = 50 mA 7 V
Voltage (I C = 0)
V CE(sat) Collector-Emitter IC = 70 A IB = 7A 0.9 V
Saturation Voltage IC = 70 A IB = 7A T j = 100 o C 1.5 V
IC = 35 A IB = 1.75 A 0.9 V
IC = 35 A IB = 1.75 A T j = 100 o C 1.2 V
V BE(sat) Base-Emitter IC = 70 A IB = 7A 1.8 V
Saturation Voltage IC = 70 A IB = 7A T j = 100 o C 1.9 V
IC = 35 A IB = 1.75 A 1.4 V
o
IC = 35 A IB = 1.75 A Tj = 100 C 1.4 V
dic /dt Rated of Rise of V CC = 100 V RC = 0 I B1 = 3.5 A 140 A/