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Preliminary Technical Information

PolarHTTM HiPerFET IXFK 102N30P VDSS = 300 V
Power MOSFET ID25 = 102 A
RDS(on) 33 m
N-Channel Enhancement Mode trr 200 ns
Fast Intrinsic Diode
Avalanche Rated

Symbol Test Conditions Maximum Ratings

VDSS TJ = 25