4n60d_4n60f_4n60i_4n60p.pdf part of , text manual preview

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4N60
Surface Mount N-Channel Power MOSFET
DRAIN CURRENT
P b Lead(Pb)-Free
4 AMPERES

Description: DRAIN SOURCE VOLTAGE
600 VOLTAGE
The WEITRON 4N60 is a high voltage MOSFET and is designed
to have better characteristics, such as fast switching time, low
gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used
at high speed switching applications in power supplies, PWM D-PAK3/(TO-251)
motor controls, high efficient DC to DC converters and bridge
circuits.
2 DRAIN
Features: D-PAK/(TO-252)
* R DS(ON) =2.5 Ohms @VGS
* Ultra low gate charge =10V
* Low reverse transfer Capacitance 1 GATE
* Fast switching capability
* Avalanche energy Specified 3 TO-220 TO-220F
* Improved dv/dt capability, high ruggedness SOURCE

Maximum Ratings(T A =25 C Unless Otherwise Specified)
Rating Symbol Value Unit

Drain-Source Voltage VDSS 600
V
Gate-Source Voltage VGSS