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2SC4944
DUAL TRANSISTOR (NPN+ NPN)

SOT-353
Features
Small package (dual type)
High voltage and high current
High hFE, excellent hFE linearity
1
Complementary to 2SA1873

Marking: LY LGR

MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Symbol Parameter Value Units

VCBO Collector-Base Voltage 60 V

VCEO Collector-Emitter Voltage 50 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 150 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55 to150

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 60 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V
Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 5 V
Collector cut-off current ICBO VCB=60V,IE=0 0.1 A
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 A
DC current gain hFE VCE=6V,IC=2mA 120 400
Collector-emitter saturation voltage VCE(sat) IC=100mA,IB=10mA 0.25 V
Transition frequency fT VCE=10V,IC=1mA 80 MHz
Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 3.5 pF

CLASSIFICATION OF hFE
Rank Y GR

Range 120-240 200-400

Marking LY LGR

1
JinYu www.htsemi.com
semiconductor

Date:2011/ 05