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BUF405A
BUF405AFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s HIGH SWITCHING SPEED NPN POWER
TRANSISTORS
s EASY TO DRIVE
s HIGH VOLTAGE FOR OFF-LINE
APPLICATIONS
s 100 KHz SWITCHING SPEED
s LOW COST DRIVE CIRCUITS
s LOW DYNAMIC SATURATION
3 3
2 2
APPLICATIONS: 1 1
s SWITCH MODE POWER SUPPLIES
s MOTOR DRIVERS
TO-220 ISOWATT220
DESCRIPTION
These Easy-to-Drive FASTSWITCH NPN power
transistors are specially designed for high
reliability industrial and professional power driving
INTERNAL SCHEMATIC DIAGRAM
applications such us motor drives and off-line
switching power supplies. ETD transistors will
operate using easy drive circuits at up to 100KHz;
this helps to simplify designs and improve
reliability. The superior switching performance
and low crossover losses reduce dissipation and
consequently lowers the equipment operating
temperature.
ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Valu e Un it
BUF405A BUF 405AFI Un it
V CEV Collector-Emitter Voltage (VBE = -1.5 V) 1000 V
V CEO Collector-Emitter Voltage (IB = 0) 450 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
IC Collector Current 7.5 A
I CM Collector Peak Current (tp < 5 ms) 15 A
IB Base Current 3 A
I BM Base Peak Current (tp < 5 ms) 4.5 A
o
P tot T otal Dissipation at Tc = 25 C 80 40 W
o
T s tg Storage Temperature -65 to 150 C
o
Tj Max O peration Junction Temperature 150 C
July 1997 1/6
BUF405A / BUF405AFI
THERMAL DATA
o
TO-220 IS OW ATT 220 C/W
o
R t hj-ca se Thermal Resistance Junction-Case Max 1.56 3.12 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CER Collector Cut-off V CE = V CEV 0.1 mA
o
Current (R BE = 5 ) V CE = V CEV T c = 100 C 0.5 mA
I CEV Collector Cut-off V CE = V CEV V BE = -1.5 V 0.1 mA
o
Current (IB = 0) V CE = V CEV V BE = -1.5 V Tc =100 C 0.5 mA
I EBO Emitter Cut-off Current V BE = 5 V 1 mA
(I C = 0)
V CEO(sus ) Collector-Emitter I C = 200 mA L = 25 mH 450 V
Sustaining Voltage
V EBO Emitter Base Voltage I E = 50 mA 7 V
(I C = 0)
V CE(sat ) Collector-Emitter IC = 2.5 A IB = 0.25 A 0.8 V
o
Saturation Voltage IC = 2.5 A IB = 0.25 A Tc =100 C 2.8 V
IC = 5 A IB = 1 A 0.5 V
IC = 5 A IB = 1 A Tc =100 oC 2 V
V BE(s at) Base-Emitter IC = 2.5 A IB = 0.25 A 0.9 V
o
Saturation Voltage IC = 2.5 A IB = 0.25 A Tc =100 C 1.5 V
IC = 5 A IB = 1 A 1.1 V
o
IC = 5 A IB = 1 A Tc =100 C 1.5 V
di c /dt Rate of rise on-state V CC = 300 V R C = 0 tp = 3