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CEM4282
N-Channel Enhancement Mode Field Effect Transistor

FEATURES
5
40V, 6.6A, RDS(ON) = 36m @VGS = 10V.

RDS(ON) = 48m @VGS = 4.5V.

Super high dense cell design for extremely low RDS(ON).

High power and current handing capability.
D D D D
Lead free product is acquired. 8 7 6 5

Surface mount Package.




SO-8
1 2 3 4
1 S S S G




ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter Symbol Limit Units
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS