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SEMICONDUCTOR KTD2092
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
A C
DIM MILLIMETERS
F
FEATURES S
A _
10.0 + 0.3
P
B _
15.0 + 0.3
High hFE : hFE=500 1500 (IC=0.5A). E
C _
2.70 + 0.3
B
Low Collector Saturation :VCE(sat)=0.35V(Max.) (IC=1A). D 0.76+0.09/-0.05
G
E 3.2 + 0.2
_
F _
3.0 + 0.3
G _
12.0 + 0.3
H 0.5+0.1/-0.05
L L J _
13.6 + 0.5
K
R _
K 3.7 + 0.2
MAXIMUM RATING (Ta=25 ) M
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
J
CHARACTERISTIC SYMBOL RATING UNIT D D N _
2.54 + 0.1
P _
6.8 + 0.1
Collector-Base Voltage VCBO 100 V Q _
4.5 + 0.2
R _
2.6 + 0.2
N N H
Collector-Emitter Voltage VCEO 80 V S 0.5 Typ
Emitter-Base Voltage VEBO 7 V
DC IC 3 1. BASE
Q
1 2 3
Collector Current A 2. COLLECTOR
Pulse ICP 5
3. EMITTER
Base Current IB 1 A
Collector Power Ta=25 2 TO-220IS
PC W
Dissipation Tc=25 25
Junction Temperature Tj 150
EQUIVALENT CIRCUIT
Storage Temperature Range Tstg -55 150 COLLECTOR
BASE
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=80V, IE=0 - - 10 A
Emitter Cut-off Current IEBO VEB=7V, IC=0 - - 10 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=50mA, IB=0 80 - - V
hFE(1) VCE=1V, IC=0.5A 500 - 1500
DC Current Gain
hFE(2) VCE=1V, IC=1A 150 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=1A, IB=0.01A - - 0.35 V
Base-Emitter Saturation Voltage VBE(sat) IC=1A, IB=0.01A - - 1.2 V
Collector-Emitter Forward Voltage VECF IE=3A, IB=0 - - 2.5 V
Transition Frequency fT VCE=5V, IC=1A - 140 - MHz
Collector Output Capacitance Cob VCE=10V, IE=0, f=1MHz - 30 - pF
OUTPUT
Turn-on Time ton - 0.5 -
20