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STD11NM50N
STF11NM50N, STP11NM50N
N-channel 500 V, 0.4 9 A MDmeshTM II Power MOSFET
,
in DPAK, TO-220FP and TO-220
Features
RDS(on)
Type VDSS @TJmax ID
max 3
1
3
STD11NM50N 2
DPAK 1
STF11NM50N 550 V < 0.47 9A
STP11NM50N TO-220
100% avalanche tested
3
Low input capacitances and gate charge 1
2
Low gate input resistance TO-220FP
Application
Switching applications
Figure 1. Internal schematic diagram
Description
This second generation of MDmeshTM technology,
applies the benefits of the multiple drain process
to STMicroelectronics' well-known PowerMESHTM
horizontal layout structure. The resulting product
offers improved on-resistance, low gate charge,
high dv/dt capability and excellent avalanche
characteristics.
Table 1. Device summary
Order codes Marking Package Packaging
STD11NM50N 11NM50N DPAK Tape and reel
STF11NM50N 11NM50N TO-220FP Tube
STP11NM50N 11NM50N TO-220 Tube
April 2010 Doc ID 17156 Rev 2 1/16
www.st.com 16
Contents STD11NM50N, STF11NM50N, STP11NM50N
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 Doc ID 17156 Rev 2
STD11NM50N, STF11NM50N, STP11NM50N Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Value
Symbol Parameter Unit
TO-220 DPAK TO-220FP
VDS Drain-source voltage (VGS = 0) 500 V
VGS Gate-source voltage