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STW26NM60
N-CHANNEL 600V - 0.125 - 30A TO-247
MDmeshTM MOSFET
Table 1: General Features Figure 1: Package
TYPE VDSS RDS(on) ID
STW26NM60 600 V < 0.135 30 A
s TYPICAL RDS(on) = 0.125
s HIGH dv/dt AND AVALANCHE CAPABILITIES
s IMPROVED ESD CAPABILITY
s LOW INPUT CAPACITANCE AND GATE
CHARGE
s)
s LOW GATE INPUT RESISTANCE
t(
3
2
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1
DESCRIPTION TO-247
The MDmeshTM is a new revolutionary MOSFET
d
technology that associates the Multiple Drain pro-
cess with the Company's PowerMESHTM horizon-
P ro
te
tal layout. The resulting product has an
Figure 2: Internal Schematic Diagram
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
le
so
adoption of the Company's proprietary strip tech-
nique yields overall dynamic performance that is
Ob
significantly better than that of similar competi-
tion's products.
-
APPLICATIONS
t( s)
uc
The MDmeshTM family is very suitable for increas-
ing power density of high voltage converters allow-
d
ing system miniaturization and higher efficiencies.
Pro
e
let
so
Table 2: Order Codes
Ob
SALES TYPE MARKING PACKAGE PACKAGING
STW26NM60 W26NM60 TO-247 TUBE
Rev. 5
February 2005 1/9
STW26NM60
Table 3: Absolute Maximum ratings
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 k) 600 V
VGS Gate- source Voltage