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STP6NB80
STP6NB80FP
N-CHANNEL 800V - 1.6 - 5.7A TO-220/TO-220FP
PowerMeshTM MOSFET
TYPE VDSS RDS(on) ID
STP6NB80 800 V < 1.9 5.7 A
STP6NB80FP 800 V < 1.9 5.7 A
s TYPICAL RDS(on) = 1.6
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED 3 3
s VERY LOW INTRINSIC CAPACITANCES 2 2
1 1
DESCRIPTION TO-220 TO-220FP
Using the latest high voltage MESH OVERLAYTM
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprieraty edge termi-
nation structure, gives the lowest R DS(on) per area, INTERNAL SCHEMATIC DIAGRAM
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC-DC & DC-AC CONVERTERS FOR
WELDING EQUIPMENT AND
UNINTERRUPTIBLE POWER SUPPLIES AND
MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP6NB80 STP6NB80FP
VDS Drain-source Voltage (VGS = 0) 800 V
VDGR Drain-gate Voltage (RGS = 20 k) 800 V
VGS Gate- source Voltage