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July 1996
NDS8425
Single N-Channel Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel enhancement mode power field effect 7.4 A, 20 V. RDS(ON) = 0.025 @ VGS= 4.5 V.
transistors are produced using Fairchild's proprietary, high cell RDS(ON) = 0.03 @ VGS= 2.7V.
density, DMOS technology. This very high density process is High density cell design for extremely low RDS(ON).
especially tailored to minimize on-state resistance and provide
superior switching performance. These devices are particularly High power and current handling capability in a widely used
surface mount package.
suited for low voltage applications such as notebook computer
power management and other battery powered circuits where
fast switching, low in-line power loss, and resistance to
transients are needed.
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5 4
6 3
7 2
8 1
ABSOLUTE MAXIMUM RATINGS T A = 25