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SEMICONDUCTOR KMA2D0DP20X
TECHNICAL DATA Dual P-CH Trench MOSFET
General Description
It's mainly suitable for use as a load switch in battery powered
applications. A
F
6 4 C
FEATURES B1 B E
VDSS=-20V, ID=-2.0A. 1 3
Drain-Source ON Resistance. DIM MILLIMETERS
A _
2.926 + 0.05
: RDS(ON)=130m (Max.) @ VGS=-4.5V. G
B _
2.80 + 0.15
B1 _
1.626 + 0.05
: RDS(ON)=190m (Max.) @ VGS=-2.5V. _
C 0.15 + 0.05
D 1.25 MAX
D1 _
1.10 + 0.05
D1 D D2 0~0.10
E _
0.45 + 0.08
D2 F _
0.95 + 0.05
G _
0.40 + 0.05
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDSS -20 V TSOP-6
Gate-Source Voltage VGSS 10 V
DC ID * -2
Drain Current A
Pulsed IDP* -7
Source-Drain Diode Current IS* -1.25 A
Drain Power Dissipation Ta=25 PD * 1 W
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Resistance, Junction to Ambient RthJA * 59 /W
* : Surface Mounted on 1 1 Board, t 10 sec.
PIN CONNECTION (TOP VIEW) S1 S2
G1 1 6 D1
G1 G2
S2 2 5 S1
G2 3 4 D2
D1 D2
2005. 11. 23 Revision No : 0 1/5
KMA2D0DP20X
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=-250 A, VGS=0V -20 - - V
Drain Cut-off Current IDSS VGS=0V, VDS=-16V - - -1 A
Gate Leakage Current IGSS VGS= 10V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=-250 A -0.5 -0.8 -1.5 V
VGS=-4.5V, ID=-2.0A (Note 2) - 115 130
Drain-Source ON Resistance RDS(ON) m
VGS=-2.5V, ID=-1.0A (Note 2) - 175 190
On-State Drain Current ID(ON) VGS=-4.5V, VDS=-5V (Note 2) -5 - - A
Forward Transconductance gfs VDS=-5V, ID=-2A (Note 2) - 6 - S
Diode Forward Voltage VSD VGS=0V, IS=-1.25A (Note 2) - -0.85 -1.2 V
Dynamic (Note 3)
Total Gate Charge Qg VDS=-10V, ID=-2A - 3.5 -
Gate-Source Charge Qgs VGS=-4.5V - 0.9 - nC
Gate-Drain Charge Qgd (Fig.1) - 1.1 -
Turn-on Delay time td(on) - 11.5 -
VDS=-10V, ID=-1A
Turn-on Rise time tr - 15.6 -
VGS=-4.5V RG=6 ns
Turn-off Delay time td(off) - 83.1 -
(Fig.2)
Turn-off Fall time tf - 43.6 -
Input Capacitance Ciss - 295 -
Output Capacitance Coss VDS=-20V, VGS=0V f = 1.0MHz - 63 - pF
Reverse Trancefer Capacitance Crss - 52 -
Note 1) Pulse test : Pulse width 300 , Duty Cycle 2%
Note 2) Guaranteed by design, not subject to production testing.
2005. 11. 23 Revision No : 0 2/5
KMA2D0DP20X
ID - VDS ID - VGS
-20 -15
-10V
-4.5V
Drain Current ID (A)
-16 -12
Drain Current ID (A)
-6V -4V Tj= -55 C
Tj=125 C
Tj=25 C
-12 -9
-3V
-8 -6
-4 VGS = -2V -3
0 0
0 -0.5 -1 -1.5 -2 -2.5 -3 0 -0.8 -1.6 -2.4 -3.2 -4.0 -4.8
Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V)
Vth - Tj IS - VSD
1.3
Normalized Threshold Voltage Vth
-20
ID= -250