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BUL416
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
n STMicroelectronics PREFERRED SALES Figure 1: Package
TYPE
n NPN TRANSISTOR
n HIGH VOLTAGE CAPABILITY
n VERY HIGH SWITCHING SPEED
n FULLY CHARACTERISEZ AT 125 oC
n LOW SPREAD OF DYNAMIC PARAMETERS
s)
3
APPLICATIONS 2
t(
1
ELECTRONIC BALLAST FOR TO-220
uc
n
FLUORESCENT LIGHTING
SWITCH MODE POWER SUPPLIES
d
ro
n
Figure 2: Internal Schematic Diagram
DESCRIPTION
P
The device is manufactured using high voltage
Multi-Epitaxial Mesa technology for cost-effective
le te
so
high performance. It uses a Hollow Emitter
structure to enhance switching speeds.
Ob
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies. -
Table 1: Order Codes
ct (s)
du
Part Number Marking Package Packaging
ro
BUL416A
BUL416 or (#) TO-220 Tube
e P BUL416B
let
# See:note on page 2
Table 2: Absolute Maximum Ratings
o
bs
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 1600 V
O VCEO
VEBO
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
800
9
V
V
IC Collector Current 6 A
ICM Collector Peak Current (tp < 5ms) 9 A
IB Base Current 5 A
IBM Base Peak Current (tp < 5ms) 8 A
Ptot o 110 W
Total Dissipation at TC = 25 C
Tstg Storage Temperature -65 to 150