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Transistors
High-current Gain Medium
Power Transistor (20V, 0.5A)
2SD2114K / 2SD2144S
FFeatures FExternal dimensions (Units: mm)
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO = 12V (Min.)
3) Low VCE(sat).
VCE(sat) = 0.18V (Typ.)
(IC / IB = 500mA / 20mA)
FStructure
Epitaxial planar type
NPN silicon transistor
(96-232-C107)
232
Transistors 2SD2114K / 2SD2144S
FAbsolute maximum ratings (Ta = 25_C)
FElectrical characteristics (Ta = 25_C)
FPackaging specifications and hFE FElectrical characteristic curves
hFE values are classified as follows :
233
Transistors 2SD2114K / 2SD2144S
234
Transistors 2SD2114K / 2SD2144S
FRon measurement circuit
235