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DISCRETE SEMICONDUCTORS

DATA SHEET

BF410A to D
N-channel silicon field-effect
transistors
Product specification December 1990
File under Discrete Semiconductors, SC07
Philips Semiconductors Product specification

N-channel silicon field-effect transistors BF410A to D

DESCRIPTION PINNING - TO-92 VARIANT
Asymmetrical N-channel planar 1 = drain
epitaxial junction field-effect 2 = source
transistors in a plastic TO-92 variant;
3 = gate
intended for applications up to the
VHF range.
These FETs can be supplied in four
IDSS groups. Special features are the
low feedback capacitance and the low
noise figure. Thanks to these special 1
handbook, halfpage 2
features the BF410 is very suitable for 3 d
applications such as the RF stages in g
s
FM portables (type A), car radios
(type B) and mains radios (type C) or MAM257

the mixer stage (type D).

Fig.1 Simplified outline and symbol

QUICK REFERENCE DATA
Drain-source voltage VDS max. 20 V
Drain current (DC or average) ID max. 30 mA
Total power dissipation
up to Tamb = 75