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SEMICONDUCTOR TECHNICAL DATA by MMDF2C03HD/D

TM Data Sheet
Designer's

Medium Power Surface Mount Products MMDF2C03HD
Complementary TMOS Motorola Preferred Device

Field Effect Transistors COMPLEMENTARY
MiniMOSTM devices are an advanced series of power MOSFETs DUAL TMOS POWER FET
which utilize Motorola's High Cell Density HDTMOS process. 2.0 AMPERES
These miniature surface mount MOSFETs feature ultra low RDS(on) 30 VOLTS
and true logic level performance. They are capable of withstanding RDS(on) = 0.070 OHM
high energy in the avalanche and commutation modes and the (N-CHANNEL)
drain-to-source diode has a very low reverse recovery time. TM RDS(on) = 0.200 OHM
MiniMOS devices are designed for use in low voltage, high speed (P-CHANNEL)
switching applications where power efficiency is important. Typical
applications are dc-dc converters, and power management in
portable and battery powered products such as computers, D
printers, cellular and cordless phones. They can also be used for N