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SEMICONDUCTOR KTC4369
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
A C
FEATURES
DIM MILLIMETERS
F
Good Linearity of hFE. S
A _
10.0 + 0.3
P
B _
15.0 + 0.3
Complementary to KTA1658. E
C _
2.70 + 0.3
B
D 0.76+0.09/-0.05
G
E 3.2 + 0.2
_
F _
3.0 + 0.3
G _
12.0 + 0.3
H 0.5+0.1/-0.05
_
MAXIMUM RATING (Ta=25 ) L L J 13.6 + 0.5
K
R _
K 3.7 + 0.2
CHARACTERISTIC SYMBOL RATING UNIT L 1.2+0.25/-0.1
M
M 1.5+0.25/-0.1
J
D D N _
2.54 + 0.1
Collector-Base Voltage VCBO 30 V
P _
6.8 + 0.1
Q _
4.5 + 0.2
Collector-Emitter Voltage VCEO 30 V _
2.6 + 0.2
R
N N H S 0.5 Typ
Emitter-Base Voltage VEBO 5 V
Collector Current IC 3 A
IB 1. BASE
Base Current 0.3 A
Q
1 2 3
2. COLLECTOR
Collector Power Dissipation (Tc=25 ) PC 15 W 3. EMITTER
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=20V, IE=0 - - 1.0 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 1.0 A
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 30 - - V
hFE(1) (Note) VCE=2V, IC=0.5A 70 - 240
DC Current Gain
hFE(2) VCE=2V, IC=2.5A 25 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=2A, IB=0.2A - 0.3 0.8 V
Base-Emitter Voltage VBE VCE=2V, IC=0.5A - 0.75 1.0 V
Transition Frequency fT VCE=2V, IC=0.5A - 100 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 35 - pF
Note : hFE(1) Classification O:70~140, Y:120~240
2007. 5. 22 Revision No : 2 1/2
KTC4369
I C - V CE I C - V BE
4.0 3.0
COMMON
COLLECTOR CURRENT I C (A)
COLLECTOR CURRENT I C (A)
COMMON EMITTER EMITTER
Tc=25 C 2.5 VCE =2V
40
3.0
30
20 2.0
TC =75 C
TC =25 C
TC =-25 C
15
2.0 1.5
10
1.0
1.0 8
5 0.5
I B =3mA
0
0 0
0 1.6 3.2 4.8 6.4 8.0 9.6 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
COLLECTOR-EMITTER VOLTAGE V CE (V) BASE-EMITTER VOLTAGE V BE (V)
h FE - I C VCE(sat) - I C
COLLECTOR-EMITTER SATURATION
1k 1
COMMON EMITTER COMMON EMITTER
500 VCE =2V 0.5 I C /I B =10
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
300 0.3
Tc=75 C
Tc=25 C C
100 0.1 = 75
Tc
50 Tc=-25 C 0.05 Tc=25 C
Tc=-25 C
30 0.03
10 0.01
0.003 0.01 0.03 0.1 0.3 1 3 0.003 0.01 0.03 0.1 0.3 1 3
COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)
SAFE OPERATING AREA
10
I C MAX(PULSED) *
Pc - Ta
5
COLLECTOR CURRENT IC (A)
I C MAX
1m
COLLECTOR POWER DISSIPATION
28
10 m
(CONTINUOUS)
S
Tc=Ta
3
S
INFINITE HEAT SINK *
50
24
DC
0m
*
OP c=2
S
T
ER 5 C
20
AT
*
1
P C (W)
IO
16
N
12 0.5
* SINGLE NONREPETITIVE
VCEO MAX
0.3 PULSE Tc=25 C
8
CURVES MUST BE DERATED
4 LINEARLY WITH INCREASE
IN TEMPERATURE
0 0.1
0 20 40 60 80 100 120 140 160 1 3 10 30 100
AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE VCE (V)
2007. 5. 22 Revision No : 2p 2/2