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SEMICONDUCTOR KTC814U
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
FOR MUTING AND SWITCHING APPLICATION.
FEATURES
B
High Emitter-Base Voltage : VEBO=25V(Min.) B1
High Reverse hFE
1 6 DIM MILLIMETERS
: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) A _
2.00 + 0.20
C
_
A1
2 5 A1 1.3 + 0.1
A
Low on Resistance : RON=1 (Typ.), (IB=5mA) B _
2.1 + 0.1
C
3 4 D B1 _
1.25 + 0.1
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
MAXIMUM RATING (Ta=25 ) H _
0.9 + 0.1
H
T T 0.15+0.1/-0.05
CHARACTERISTIC SYMBOL RATING UNIT
VCBO G
Collector-Base Voltage 50 V
Collector-Emitter Voltage VCEO 20 V
1. Q 1 EMITTER
VEBO 2. Q 1 BASE
Emitter-Base Voltage 25 V 3. Q 2 COLLECTOR
4. Q 2 EMITTER
Collector Current IC 300 mA 5. Q 2 BASE
6. Q 1 COLLECTOR
Base Current IB 60 mA
Collector Power Dissipation PC * 200 mW
Junction Temperature Tj 150 US6
Storage Temperature Range Tstg -55 150
* Total Rating
EQUIVALENT CIRCUIT (TOP VIEW) Marking 6 5 4
6 5 4
Lot No.
HB
Type Name
Q1 Q2
1 2 3 1 2 3
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=25V, IC=0 - - 0.1 A
DC Current Gain hFE VCE=2V, IC=4mA 350 - 1200
Collector-Emitter Saturation Voltage VCE(sat) IC=30mA, IB=3mA - 0.042 0.3 V
Base-Emitter Voltage VBE VCE=2V, IC=4mA - 0.61 - V
Transition Frequency fT VCE=6V, IC=4mA - 30 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 4.8 7 pF
OUTPUT
Turn-on Time ton - 160 -
INPUT 4k
1k
Switching 10V
Storage Time tstg - 500 - nS
3k
50
Time
1