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Philips Semiconductors Product specification

TrenchMOSTM transistor BUK9775-55
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effect power transistor in a
plastic full-pack envelope using VDS Drain-source voltage 55 V
'trench' technology. The device ID Drain current (DC) 11.7 A
features very low on-state resistance Ptot Total power dissipation 19 W
and has integral zener diodes giving Tj Junction temperature 150