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STS10N3LH5
N-channel 30 V, 0.019 , 10 A, SO-8
STripFETTM V Power MOSFET
Features
Type VDSS RDS(on) max ID
STS10N3LH5 30 V 0.021 10 A
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
Very low switching gate charge
High avalanche ruggedness SO-8
Low gate drive power losses
Application
Switching applications
Description Figure 1. Internal schematic diagram
This STripFETTMV Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM.
Table 1. Device summary
Order codes Marking Package Packaging
STS10N3LH5 10D3L SO-8 Tape and reel
May 2009 Doc ID 15618 Rev 1 1/13
www.st.com 13
Contents STS10N3LH5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ........................... 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13 Doc ID 15618 Rev 1
STS10N3LH5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 30 V
VGS Gate-Source voltage