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INTEGRATED CIRCUITS
DATA SHEET
TEA1102; TEA1102T; TEA1102TS Fast charge ICs for NiCd, NiMH, SLA and LiIon
Preliminary specification Supersedes data of 1997 Oct 09 File under Integrated Circuits, IC03 1999 Jan 27
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
FEATURES · Safe and fast charging of Nickel Cadmium (NiCd), Nickel Metal Hydride (NiMH), Lithium Ion (LiIon), and Sealed Lead Acid (SLA) batteries · Three charge states for NiCd or NiMH; fast, top-off and trickle or voltage regulation (optional) · Two charge states for LiIon or SLA; current and voltage limited · Adjustable fast charge current [0.5CA to 5CA nominal (CA = Capacity Amperes)] · DC top-off and pulsating trickle charge current (NiCd and NiMH) · Temperature dependent T/t battery full detection · Automatic switch-over to accurate peak voltage detection (-1/4%) if no NTC is applied · Possibility to use both T/t and peak voltage detection as main fast charge termination · Support of inhibit during all charging states · Manual refresh with regulated adjustable discharge current (NiCd and NiMH) · Voltage regulation in the event of no battery · Support of battery voltage based charge indication and buzzer signalling at battery insertion, end of refresh and at full detection · Single, dual and separate LED outputs for indication of charge status state · Minimum and maximum temperature protection · Time-out protection · Short-circuit battery voltage protection · Can be applied with few low-cost external components. ORDERING INFORMATION TYPE NUMBER TEA1102 TEA1102T TEA1102TS PACKAGE NAME DIP20 SO20 SSOP20 DESCRIPTION plastic dual in-line package; 20 leads (300 mil)
TEA1102; TEA1102T; TEA1102TS
GENERAL DESCRIPTION The TEA1102x are fast charge ICs which are able fast charge NiCd and NiMH, SLA and Lilon batteries. The main fast charge termination for NiCd and NiMH batteries are T/t and peak voltage detection, both of which are well proven techniques. The TEA1102x automatically switches over from T/t to peak voltage detection if the thermistor fails or is not present. The T/t detection sensitivity is temperature dependent, thus avoiding false charge termination. Three charge states can be distinguished; fast, top-off and trickle. Charging Lilon and SLA batteries is completely different. When the batteries reach their maximum voltage (adjustable), the TEA1102x switches over from current regulation to voltage regulation. After a defined time period, which is dependent on battery capacity and charge current, charge is terminated. Due to small self discharge rates of Lilon and SLA batteries, trickle charge can be omitted. Several LEDs, as well as a buzzer, can be connected to the TEA1102x for indicating battery insertion, charge states, battery full condition and protection mode. The TEA1102x are contained in a 20-pin package and are manufactured in a BiCMOS process, essentially for integrating the complex mix of requirements in a single chip solution. Only a few external low cost components are required in order to build a state of the art charger.
VERSION SOT 146-1 SOT163-1 SOT339-1
plastic small outline package; 20 leads; body width 7.5 mm plastic shrink small outline package; 20 leads; body width 5.3 mm
1999 Jan 27
2
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
QUICK REFERENCE DATA SYMBOL VP IP VNTC/VNTC Vbat/Vbat IVbat Vbat(l) IIB IIB(max) IIB(Lmax) fosc Vreg PARAMETER supply voltage supply current temperature rate dependent (T/t) detection level voltage peak detection level with respect to top value input current battery monitor voltage at pin 19 for detecting low battery voltage battery charge current maximum battery charge current maximum load current oscillator frequency regulating voltage LiIon SLA NiCd and NiMH (pin Vstb open-circuit) open battery fast charge top-off mode outputs off VNTC = 2 V; Tj = 0 to 50 °C Vbat = 2 V; Tj = 0 to 50 °C Vbat = 0.3 to 1.9 V CONDITIONS - - - - - 10 - MIN. 5.5
TEA1102; TEA1102T; TEA1102TS
TYP. - 4 -0.25 -0.25 1 0.30 - 3 10 40 - 1.37 1.63 1.325 or Vstb 1.9 - - - - -
MAX. 11.5 V
UNIT mA % % nA V µA µA µA µA kHz V V V V
100 - - - 200 - - - -
voltage regulation full - NiCd and NiMH battery no battery - 10 - - - -
1999 Jan 27
3
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Vbat 19 Vstb 1 Rref 20 top standby load fast charge off current current 1.25/Rref 3 µA 10 µA 40 µA 4.25 V OSC 14 PROTECTION CHARGE CONTROL AND OUTPUT DRIVERS 3.3 V NTC present 0.3 V 2.8 V 4.25 V 156 k MTV 9 1V 12 k 0.75 V 36 k Tmin 1V Tmax 1.9 V Tcut-off nobattery 1.325 V/Vstb 1.37 V 1.63 V 1.9 V NiCd Llion SLA nobattery NIMH A4 refresh 100 mV 10 RFSH end refresh battery low Vbat Vreg LS OSC PWM SET 15 A2 R Q S 17 LS PWM A1 A3 4× 18 AO
BLOCK DIAGRAM
Philips Semiconductors
Fast charge ICs for NiCd, NiMH, SLA and LiIon
Fig.1 Block diagram.
handbook, full pagewidth
4
TEA1102
2 4
IB PSD LED
CONTROL LOGIC 8
NTC
Vbat DA/AD CONVERTER 12 VP SUPPLY BLOCK 13 Vsl 16 VS 3 GND 11 FCT
TIMER AND CHARGE STATUS INDICATION
5
TEA1102; TEA1102T; TEA1102TS
6 7
POD PTD
Preliminary specification
MGC818
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
PINNING SYMBOL Vstb IB GND PSD LED POD PTD NTC MTV RFSH FCT VP Vsl OSC PWM VS LS AO Vbat Rref PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 DESCRIPTION standby regulation voltage input (NiCd and NiMH) charge current setting ground program pin sample divider LED output program pin oscillator divider program pin time-out divider temperature sensing input maximum temperature voltage refresh input/output fast charge termination and battery chemistry identification positive supply voltage switched reference voltage output oscillator input pulse width modulator output stabilized reference voltage loop stability pin analog output single-cell battery voltage input reference resistor pin
RFSH 10 PSD 4 LED 5
handbook, halfpage
TEA1102; TEA1102T; TEA1102TS
Vstb 1 IB 2 GND 3
20 Rref 19 Vbat 18 AO 17 LS 16 VS
TEA1102
POD 6 PTD 7 NTC 8 MTV 9 15 PWM 14 OSC 13 Vsl 12 VP 11 FCT
MBH067
Fig.2 Pin configuration.
1999 Jan 27
5
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
INTRODUCTION All battery types are initially fast charged with an adjustable high current. Fast charge termination depends upon the battery type. With NiCd and NiMH batteries the main fast charge termination will be the T/t (temperature detection) and/or peak voltage detection and with SLA and LiIon batteries when the battery voltage reaches 2.45 or 4.1 V respectively. The fast charge period is followed by a top-off period for NiCd and NiMH batteries and by a fill-up period for SLA and LiIon batteries. During the top-off period the NiCd and NiMH batteries are charged to maximum capacity by reduced adjustable charge current. During the fill-up period the SLA and LiIon batteries are charged to maximum capacity by a constant voltage and a gradually decreasing current. The fill-up and top-off period ends after time-out or one hour respectively. After the fill-up or top-off period, the TEA1102x switches over to the standby mode. For NiCd and NiMH batteries either the voltage regulation or trickle charge mode can be selected. The voltage regulation mode is selected when the battery includes a fixed load. Trickle charge prevents a discharge of the battery over a long period of time. For SLA and LiIon batteries the charge current is disabled during standby. The fast charge mode is entered again when the battery voltage reaches 1.5 V (SLA) or 3 V (LiIon). Charging principles CHARGING NiCd/NiMH BATTERIES Fast charging of the battery begins when the power supply voltage is applied and at battery insertion. During fast charge of NiCd and NiMH batteries, the battery temperature and voltage are monitored. Outside the initialized temperature and voltage window, the system switches over to the top-off charge current. The TEA1102x supports detection of fully charged NiCd and NiMH batteries by either of the following criteria: · T/t · Voltage peak detection. If the system is programmed with T/t and Vpeak or, T/t or Vpeak as the main fast charge termination, it automatically switches to voltage peak detection if the battery pack is not provided with a temperature sensing input (NTC). In this way both packages, with and without temperature sensor, can be used randomly independent of the applied full detection method. Besides T/t and/or 1999 Jan 27 6
TEA1102; TEA1102T; TEA1102TS
voltage peak detection, fast charging is also protected by temperature cut-off and time-out. To avoid false fast charge termination by peak voltage detection or T/t, full detection is disabled during a short hold-off period at the start of a fast charge session. After fast charge termination, the battery is extra charged by a top-off period. During this period of approximately one hour, the charge current is lowered thus allowing the battery to be charged to nearly 100% before the system switches over to standby. After the battery has been charged to nearly 100% by the top-off period, discharge of the battery (caused by a load or by the self-discharge) can be avoided by voltage regulation or by trickle charge. If batteries are charged in combination with a load, the TEA1102x can be programmed to apply voltage regulation during the standby mode. In this way, discharge of the battery caused by self-discharge or by an eventual load is avoided. The regulating voltage is adjustable to the voltage characteristic of the battery. For battery safety the charge current is limited and the temperature is monitored during voltage regulation. If a trickle charge is applied, the self-discharge of the battery will be compensated by a pulsating charge current. To avoid the so called `memory effect' in NiCd batteries, a refresh can be manually activated.The discharge current is regulated by the IC in combination with an external power transistor. After discharging the battery to 1 V per cell, the system automatically switches over to fast charge. CHARGING LiION/SLA BATTERIES Charging these types of batteries differs considerably from charging NiCd and NiMH batteries. The batteries will be charged with a charge current of 0.15 CA if their cell voltage is below the minimum voltage of 0.9 V for Lilon or 0.45 V for SLA. With batteries in good condition the battery voltage will rise above 0.9 V in a short period of time. When the batteries are short-circuited the voltage will not rise above 0.9 V within one hour and the system will change over to cut-off, which means that the output drivers AO and PWM are fixed to zero and that battery charge can only be started again after a power-on reset. If the battery voltage of a good condition battery is above the minimum level of 0.9 V the battery will be charged with the programmed fast charge current. If Lilon or SLA batteries are used, `full' is detected when the battery voltage reaches 4.1 and 2.45 V respectively. At this point the TEA1102x switches from current regulation to voltage regulation (fill-up mode).
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
After the `fill-up' period the charge current is not regulated, which means that the output drivers AO and PWM are fixed to zero. When the battery voltage becomes less than 3 V for Lilon and 1.5 V for SLA, the IC enters the fast charge mode again. FUNCTIONAL DESCRIPTION Control logic The main function of the control logic is to support the communication between several blocks. It also controls the charge method, initialization and battery full detection. The block diagram of the TEA1102x is illustrated in Fig.1. Conditioning charge method and initializations At system switch-on, or at battery insertion, the control logic sets the initialization mode in the timer block. After the initialization time the timer program pins can be used to indicate the charging state using several LEDs. The charge method is defined at the same time by the following methods: · If the FCT pin is 0 or 1.25 V, indicating that SLA or LiIon batteries have to be charged, the battery will be charged by limit current and limit voltage regulation. Without identification (FCT pin floating), the system will charge the battery according to the charge characteristic of NiCd and NiMH batteries. Table 1 Functionality of program pins FUNCTION Inhibit LiIon and SLA detection Refresh (NiCd and NiMH) T/t detection T/t and voltage peak detection Voltage peak detection Trickle charge at standby Voltage regulation at standby Notes 1. Where X = don't care. 2. Not low means floating or high. FCT X(1) low not low(2) floating high not low not low not low not low NTC X(1) X(1) X(1) note 3 note 3 note 4 X(1) note 4 note 3
TEA1102; TEA1102T; TEA1102TS
· The standby charge method (NiCd and NiMH), trickle charge or voltage regulation, is defined by the input pin Vstb. By biasing this voltage with a set voltage, the output voltage will be regulated to the Vstb set voltage. If this pin is connected to VS, or no NTC is connected the system applies trickle charge. If pin RFSH is connected to ground by depressing the switch, the TEA1102x discharges the battery via an external transistor connected to pin RFSH. The discharge current is regulated with respect to the external (charge) sense resistor (Rsense). End-of-discharge is reached when the battery is discharged to 1 V per cell. Refreshing the battery can only be activated during charging of NiCd and NiMH batteries. When charging LiIon and SLA batteries, discharge before charge is disabled. The inhibit mode has the main priority. This mode is activated when the Vstb input pin is connected to ground. Inhibit can be activated at any charge/discharge state, whereby the output control signals will be zero, all LEDs will be disabled and the charger timings will be set on hold. Table 1 gives an operational summary.
RFSH X(1) X(1) low not low not low not low not low not low not low
Vstb low X(1) not low not low not low not low high not low floating(5)
3. The NTC voltage has been to be less than 3.3 V, which indicates the presence of an NTC. 4. The NTC voltage is outside the window for NTC detection. 5. Vstb has to be floating or set to a battery regulating voltage in accordance with the specification. 1999 Jan 27 7
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
Supply block The supply block delivers the following outputs: · A power-on reset pulse to reset all digital circuitry at battery insertion or supply switch-on. After a general reset the system will start fast charging the battery. · A 4.25 V stabilized voltage source (VS) is externally available. This source can be used to set the thermistor biasing, to initialize the programs, to supply the external circuitry for battery voltage based charge indication and to supply other external circuitry. · A 4.25 V bias voltage (Vsl) is available for use for more indication LEDs. This output pin will be zero during the initialization period at start-up, thus avoiding any interference of the extra LEDs when initializing. Charge control The charge current is sensed via a low-ohmic resistor (Rsense), see Fig.4. A positive voltage is created across resistor Rb by means of a current source Iref which is set by Rref in the event of fast charge and by an internal bias current source in the event of top-off and trickle charge (IIB), see Fig.1. The positive node of Rb will be regulated to zero via error amplifier A1, which means that the voltage across Rb and Rsense will be the same. The fast charge current is defined by the following equation: I fast × R sense = R b × I ref (1) The output of amplifier A1 is available at the loop stability pin LS, consequently the time constant of the current loop can be set. When Vpeak (NiCD and NiMH) is applied, the current sensing for the battery voltage will be reduced, implying that the charge current will be regulated to zero during: t sense = 2
10
TEA1102; TEA1102T; TEA1102TS
charged with approximately 0.15 Q. In this way the battery is fully charged before the system switches over to standby. When pin 1 (Vstb) is connected to VS, or no NTC is connected the system compensates the (self) discharge of the battery by trickle charge. The trickle charge current will be pulsating, defined by the following equation: 6 15 I trickle × R sense = R b × ----- × 10 (5) 16 During the non current periods at trickle charge the charge current is regulated to zero, so that the current for a load connected in series across the battery with the sense resistor will be supplied by the power supply and not by the battery. If at pin 1 (Vstb) a reference voltage is set in accordance with the specification, and no NTC is connected the charge mode will switch over from current to voltage regulation after top-off. The reference regulating voltage can be adjusted to the battery characteristic by external resistors connected to pin Vstb. This reference voltage has to be selected in such a way that it equals the rest voltage of the battery. By using voltage regulation, the battery will not be discharged at a load occurrence. If the Vstb input pin is floating, the TEA1102x will apply voltage regulation at 1.325 V during the standby mode (NiCd and NiMH). The current during voltage regulation is limited to 0.5 CA. If the battery charge current is maximized to 0.5 CA for more than 2 hours charging will be stopped. Moreover, if the temperature exceeds Tmax, charging will be stopped completely. As voltage regulation is referred to one cell, the voltage on the Vbat pin must be the battery voltage divided by the number of cells (NiCd and NiMH). For LiIon or SLA batteries, the battery is extra charged after full detection by constant voltage regulation during a certain fill-up period. LiIon and SLA batteries have to identify themselves by an extra pin on the battery pack to ground, which is connected via a resistor to pin 11 (FCT). As the battery voltage sense (Vbat) has to be normalized to a one cell voltage of NiCd and NiMH packages, the Vbat input pin will be regulated to 1.367 and 1.633 V during fill-up for LiIon and SLA respectively. In this way this system can accept a mixture of one LiIon, two SLA and three NiCd or NiMH packages. After fill-up, charging of LiIon or SLA batteries is disabled. The battery charge is then fixed to zero, ensuring maximum life-cycle of the battery. Because of a fixed zero charge current, the battery will be discharged if a load is applied. 8
× POD × t osc
(2)
Actually battery voltage sensing takes place in the last oscillator cycle of this period. To avoid modulation on the output voltage, the top-off charge current is DC regulated, defined by the following equation: I top off × R sense = R b × 3 × 10 where: t top off = 2
27 6
(3)
× TOD × t osc
(4)
The top-off charge current will be approximately 0.15 CA, which maximizes the charge in the battery under safe and slow charging conditions. The top-off charge period will be approximately one hour, so the battery will be extra 1999 Jan 27
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
To ensure an eventual load during all charging states, the fast charge mode will be entered again if the battery voltage drops below 15 V for SLA or 3 V for Lilon. When charging, the standby mode (LiIon and SLA) can only be entered after a certain period of time depending on time-out. The same applies for charging NiCd or NiMH batteries. To support full test of the TEA1102x at application, the standby mode is also entered when Vbat < Vbat(l) at fill-up or top-off respectively. Timer The timing of the circuit is controlled by the oscillator frequency. The timer block defines the maximum charging time by `time-out'. At a fixed oscillator frequency, the time-out time can be adapted by the Programmable Time-out Divider (PTD) using the following equation. t time out = 2 Table 2
26
TEA1102; TEA1102T; TEA1102TS
The time-out timer is put on hold by low voltage, temperature protection and during the inhibit mode. The Programmable Oscillator Divider (POD) enables the oscillator frequency to be increased without affecting the sampling time and time-out. Raising the oscillator frequency will reduce the size of the inductive components that are used. At fast charging, after battery insertion, after refresh or supply interruption, the full detector will be disabled for a period of time to allow a proper start with flat or inverse polarized batteries. This hold-off period is disabled at fast charging by raising pin Vstb to above ±5 V (once). So for test options it is possible to slip the hold-off period. The hold-off time is defined by the following equation: t hold off = 2
5
× t time out
(7)
Table 2 gives an overview of the settings of timing and discharge/charge currents.
× POD × PTD × t osc
(6)
Timing and current formulae SYMBOL DESCRIPTION timing NTC voltage sampling frequency battery voltage sampling frequency see Fig.3 217 × POD × PSD × tosc 216 × POD × tosc 227 × POD × tosc 226 × POD × PTD × tosc 2-5 × ttime-out inhibit or protection 214 × POD × tosc 210 × POD × tosc 221 × POD × PTD × tosc charge/discharge currents V ref Rb ----------------- × --------R sense R ref Rb 6 ----------------- × 3 × 10 R sense Rb 6 15 ----------------- × ----- × 10 R sense 16 Rb 6 ----------------- × 40 × 10 R sense 100 mV ------------------R sense FORMULAE
tosc Tsampling (T/t) Tsampling (Vpeak) ttop-off ttime-out thold-off tLED tsense tswitch Ifast
Itop-off
Itrickle
Iload-max
IRFSH
1999 Jan 27
9
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
TEA1102; TEA1102T; TEA1102TS
PTD programming handbook, full pagewidth 200 fosc (kHz) 160 prefered oscillator range (POD = +VS) C4 (pF) 68 prefered oscillator range (POD = n.c.) :1 :2 :4 (GND) (n.c.) (+VS) 12.5 (R23 min) 125 (R23 max)
120
80
100 150
prefered 40 oscillator range (POD = GND) 0
220 390 560 820 1500 60 90 120 150 180 ttime-out (min) 10 30 50 70 90 110 130 R23 (k)
MGD280
0
30
Fig.3 ttime-out as a function of R23 and PTD with C4 as parameter. · Fast charge (LED on) · 100% or refresh (LED off) · Protection or inhibit (LED floating). The refresh can be indicated by an extra LED connected to pin 4 (PSD). A buzzer can also be driven from the TEA1102x to indicate battery insertion end of refresh or full battery. AD/DA converter When battery full is determined by peak voltage detection, the Vbat voltage is sampled at a rate given by the following equation: t sampling ( V peak ) = 2
16
LED indication With few external components, indication LEDs can be connected to the program pins and the LED pin of the TEA1102x. These program pins change their function from an input to an output pin after a short initialization time at system switch-on or battery insertion. Output pin Vsl enables the external LEDs to be driven and avoids interaction with the programming of the dividers during the initialization period. The applied LEDs indicate: · Protection · Refresh · Fast charge · 100% · No-battery. The LED output pin can also indicate the charging state by one single LED. The indication LED can be connected directly to the LED output. This single LED indicates:
× POD × t osc
(8)
The analog value of a Vbat sample is then digitized and stored in a register. On the following sample, the digitized value is converted back to the analog value of Vbat and compared with the `new' Vbat sample.
1999 Jan 27
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Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
At an increase of the battery voltage the 14-bit analog-to-digital convertor (ADC) is refreshed with this new value. Therefore, the digitized value always represents the maximum battery voltage. A decreased Vbat voltage is not stored, but is compared to the stored value. Full is detected when the voltage decrease of Vbat is 1/4% of the stored peak battery value. To avoid interference due to the resistance of the battery contacts during battery voltage sensing, the charge current is regulated to zero during t = 210 × POD × tosc, via the regulation pins AO and PWM. At the last period, the Vbat voltage is sensed and stored in a sample-and-hold circuit. This approach ensures very accurate detection of the battery full condition (minus 1/4%). When battery full is determined by T/t, the voltage on the NTC pin is used as the input voltage to the AD/DA convertor. The sampling time at T/t sensing is given by the following equation: 17 T t sampling ------- = 2 × POD × PSD × t osc (9) t After this initialized sample time the new temperature voltage is compared to the preceding AD/DA voltage and the AD/DA is refreshed with this new value. A certain increase of the temperature is detected as full battery, depending on the initialization settings. The decision of full detection by T/t or Vpeak is digitally filtered thus avoiding false battery full detection. Output drivers
TEA1102; TEA1102T; TEA1102TS
The charge current regulation signal is available at two output pins, AO and PWM. ANALOG OUTPUT The analog control voltage output at pin 18 (AO) can be used to drive an opto-coupler in mains separated applications when an external resistor is connected between AO and the opto-coupler. The maximum current through the opto-coupler diode is 2 mA. The voltage gain of amplifier A2 is typical 11 dB (times 3.5). The DC voltage transfer is given by the following equation: Vao = 3.5 × (VLS - 1.35). The AO output can be used for: · Linear (DC) applications · Not mains isolated SMPS with a separate controller · Mains isolated SMPS, controlled by an opto-coupler. PULSE WIDTH MODULATOR (PWM) The LS voltage is compared internally with the oscillator voltage to deliver a pulse width modulated output at PWM (pin 15) to drive an output switching device in a SMPS converter application via a driver stage. The PWM output is latched to prevent multi-pulsing. The maximum duty factor is internally fixed to 79% (typ.). The PWM output can be used for synchronization and duty factor control of a primary SMPS via a pulse transformer.
1999 Jan 27
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Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134); note 1. SYMBOL Voltages VP VoLED Vn VIB Currents IVS IVsl IoLED IAO IoPWM IRref IP IP(stb) Dissipation Ptot total power dissipation SOT146-1 SOT163-1 SOT339-1 Temperatures Tamb Tj Tstg Note operating ambient temperature junction temperature storage temperature -20 - -55 Tamb = +85 °C - - - current at pin 16 current at pin 13 output current at pin 5 output current at pin 18 output current at pin 15 current at pin 20 positive supply current supply standby current Tj < 100 °C VP = 4 V -3 -1 - -10 -15 -1 - - positive supply voltage output voltage at pin 5 voltage at pins PWM, LS and NTC voltage at pin 2 -0.5 -0.5 -0.5 -0.5 PARAMETER CONDITIONS
TEA1102; TEA1102T; TEA1102TS
MIN. - - - - - - - - - - -
TYP.
MAX.
UNIT
11.5 15 +VS 1.0
V V V V
+0.01 +0.3 12 +0.05 +14 +0.01 30 45
mA mA mA mA mA mA mA µA
35
- - - - - -
1.2 0.6 0.45
W W W °C °C °C
+85 +150 +150
1. All voltages are measured with respect to ground; positive currents flow into the IC; all pins not mentioned in the voltage list are not allowed to be voltage driven. The voltage ratings are valid provided that other ratings are not violated; current ratings are valid provided that the power rating is not violated. QUALITY SPECIFICATION General quality specification for integrated circuits: SNW-FQ-611E.
1999 Jan 27
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Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
CHARACTERISTICS VP = 10 V; Tamb = 25 °C; Rref = 62 k; unless otherwise specified. SYMBOL PARAMETER CONDITIONS
TEA1102; TEA1102T; TEA1102TS
MIN.
TYP.
MAX.
UNIT
Supplies; pins VP, VS, Rref and Vsl VP IP Istb Vclamp Vstart VLSP VS VSL Vref TCVref Vref/VP Vref IRref supply voltage supply current standby current clamping voltage (pin 12) start voltage low supply protection level source voltage (stabilized) LED source voltage reference voltage temperature coefficient of the reference voltage IS = 2 mA ILED = 50 µA Iref = 20 µA; VP = 10 V Tamb = 0 to 45 °C; Iref = 20 µA; Vref = 1.25 V outputs off; VP = 11.5 V VP = 4 V Iclamp = 30 mA 5.5 - - 11.5 6.1 5.1 4.14 4.05 1.21 0 -46 - 10 - 4 35 - 6.4 5.3 4.25 4.25 1.25 ±60 - - - 11.5 6 45 12.8 6.7 5.5 4.36 4.45 1.29 ±120 - 5 100 V mA µA V V V V V V ppm/K dB mV µA
power supply rejection ratio of f = 100 Hz; VP = 8 V; the reference voltage VP = 2 V (p-p) load rejection of source voltage current range of reference resistor IS = 20 mA; VP = 10 V
Charge current regulation; pins IB and Rref IIB/Iref fast charge ratio VIB = 0 Iref = 10 µA Iref = 100 µA VthIB IIB IIB(max) IIB(Lmax) IIB(LI) VRsense VRFSH Vbat Isource(max) threshold voltage at pin IB charge current maximum charge current maximum load current input leakage current Tamb = 25 °C Tamb = 0 to 45 °C top-off mode; VIB = 0 voltage regulation full NiCd/NiMH battery; VIB = 0 open battery; VIB = 0 currentless mode 0.93 0.93 -2 -3 2.6 9 34 - 1.03 1.0 - - 3.2 10.5 42 - 1.13 1.07 +2 +3 3.8 12 50 170 mV mV µA µA µA nA
Refresh; pin RFSH sense resistor voltage refresh voltage for programming start of refresh voltage at pin Vbat for detecting end of refresh maximum source current Irefresh = VIB/ Rsense; refresh mode; Irefresh = 18 mA NiCd/NiMH NiCd/NiMH VIB = 75 mV; VP = 10 V; VRFSH = 2.7 V; Tamb = 25 °C 75 0 0.96 1.4 100 - 1.0 2 125 250 1.04 2.6 mV mV V mA
1999 Jan 27
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Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
SYMBOL VRFSH(max) VRFSH(off) PARAMETER maximum refresh voltage voltage at pin RFSH when refresh is off CONDITIONS IRFSH = 1 mA
TEA1102; TEA1102T; TEA1102TS
MIN. 2.7 700 - 770 TYP. - 840 MAX. UNIT V mV
Temperature related inputs; pins NTC and MTV VNTCh VNTCh(hy) VNTCl VNTCl(hy) VNTC(co) VNTC(bat) input voltage at pin NTC for detecting high temperature hysteresis of VNTCh input voltage at pin NTC, detecting low temperature hysteresis of VNTCl input voltage at pin NTC for detecting temperature cut-off maximum input voltage at pin NTC for detecting battery with NTC input current at pin NTC voltage level at pin MTV VNTC = 2 V default (open-circuit) VNTC = 2 V; Tj = 0 to 50 °C LiIon; Iref = 20 µA SLA; Iref = 20 µA NiCd and NiMH; pin Vstb open-circuit NiCd and NiMH; Vstb = 1.5 V open battery TCVreg gm temperature coefficient of regulation voltage transconductance of amplifier A3 Vreg = 1.37 V; Tamb = 0 to 45 °C Vbat = 1.9 V; no battery mode pin MTV open-circuit MTV setting 0.9 - 2.7 - 0.7MTV 3.22 1 80 2.8 75 1.1 - 2.9 - V mV V mV V V 0.95MTV MTV 1.05MTV V
0.75MTV 0.8MTV 3.3 3.38
INTC VMTV
-5 0.95 0.5 -
- 1 - -0.25
+5 1.05 2.5 -
µA V V %
VNTC/VNTC T/t detection level Voltage regulation Vreg regulation voltage
1.34 1.59 1.30 0.99Vstb 1.86 0 -
1.37 1.63 1.325 Vstb 1.9 ±60 2.0
1.40 1.67 1.35 1.01Vstb 1.94 ±120 -
V V V V V ppm/K mA/V
Program pin Vstb Vstb Vstb(im) Vstb(st) open voltage at pin Vstb voltage at pin Vstb for programming inhibit mode voltage at pin Vstb for programming voltage regulation at standby NiCd and NiMH 1.30 0 1.0 1.325 - - 1.35 0.8 2.2 V V V
Vstb(tc)
voltage at pin Vstb for NiCd and NiMH programming trickle charge at standby
2.6
-
VS
V
1999 Jan 27
14
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
SYMBOL PARAMETER CONDITIONS
TEA1102; TEA1102T; TEA1102TS
MIN. TYP. MAX. UNIT
Program pins; PSD, POD and PTD V4,6,7 V4,6,7(1) voltage level at pins PSD, POD or PTD voltage level at pins PSD, POD or PTD for programming the divider = 1 voltage level at pins PSD, POD or PTD for programming the divider = 2 voltage level at pins PSD, POD or PTD for programming the divider = 4 protection current for multi-LED indication full battery current for multi-LED indication refresh current for multi-LED indication input leakage current VPOD = 1.5 V VPTD = 1.5 V VPSD = 1.5 V default (open-circuit) 1.9 0 2.1 - 2.3 1.2 V V
V4,6,7(2)
1.6
-
2.5
V
V4,6,7(4)
3.1
-
VS
V
IPODsink IPTDsink IPSDsink ILI
8 8 8
10 10 10 -
12 12 12 50
mA mA mA µA
VPOD = 4.25 V; 0 VPTD = 4.25 V; VPSD = 4.25 V 0 0.9 2.0
Program pin FCT VFCT(SLA) VFCT(Lilon) VFCT(or) voltage level for detecting an SLA battery voltage level for detecting a LiIon battery voltage level for programming NiCd and NiMH T/t or Vpeak as fast charge termination voltage level for programming NiCd and NiMH T/t and Vpeak as fast charge termination voltage level at pin FCT default (open-circuit) - - - 0.7 1.6 3.3 V V V
VFCT(and)
3.7
-
VS
V
VFCT VLED(m)
2.3
2.6 -
2.9
V
Program pin LED output voltage level for programming multi-LED indication output voltage level for programming single LED indication maximum sink current input leakage current maximum output voltage VLED = 1.5 V VLED = 10 V VLED = 0.6 V Vo(max) 0 2.5 V
VLED(s)
3.1
-
VP
V
Isink(max) ILI(LED)
8 0 0 -
10 - - -
12 70 5 15
mA µA µA V
1999 Jan 27
15
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
SYMBOL PARAMETER CONDITIONS
TEA1102; TEA1102T; TEA1102TS
MIN. -9 50 - - - -25 16 -19 10 - - 0.3 - - 250 72 11 -21 21 -15 14 79 TYP. MAX. UNIT
Output drivers; AO, LS and PWM IAO(source) IAO(sink) gm1 Gv1,2 Gv2 ILS(source) ILS(sink) IOH(PWM) IOL(PWM) PWM analog output source current analog output sink current transconductance of amplifier A1 voltage gain of amplifiers A1 and A2 voltage gain of amplifier A2 maximum source current (pin LS) maximum sink current (pin LS) HIGH level output current LOW level output current maximum duty factor VAO = 3 V (p-p); VLS = 2.8 V VAO = 3 V (p-p); VLS = 1.2 V VIB = 50 mV VAO = 3 V (p-p) VAO = 2 V (p-p) VLS = 2.25 V VLS = 2.25 V VPWM = 3 V VPWM = 0.7 V 0 - - - - -16 25 -11 18 - - 2 - - mA µA µA/V dB dB µA µA mA mA %
Battery monitor; Vbat IVbat Vbat Vbat/Vbat Vbat battery monitor input current voltage range of Vpeak detection Vpeak detection level with respect to top level voltage resolution for Vpeak Vbat = 1.85 V; Tj = 0 to 50 °C Vbat = 1.85 V 1 - -0.25 0.6 nA V % mV
- -
Protections; Vbat Vbat(l) maximum voltage at pin Vbat for detecting low battery voltage 0.25 0.30 0.35 V
Oscillator; pin OSC Vosc(H) Vosc(L) fosc(min) fosc(max) HIGH level oscillator switching voltage LOW level oscillator switching voltage minimum oscillator frequency Rref = 125 k; Cosc = 400 pF - - 20.9 2.5 1.5 23 174 - - 25.1 190 V V kHz kHz
maximum oscillator frequency Rref = 12.5 k; Cosc = 400 pF 158
1999 Jan 27
16
This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in _white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... 1999 Jan 27 17 APPLICATION INFORMATION Philips Semiconductors
Fast charge ICs for NiCd, NiMH, SLA and LiIon
VI (DC) 7 to 18 V
TR1 BD231
L1 (SMPS only)
D8 R3 1.5 k only for VI (DC)>13V R4 3.9 k D4 fast D5 nobattery protection :4 :1 33 k R6 33 k GND R7 33 k D6 D3 BAW62 100% :4 :1 R8 33 k GND R9 33 k D6 refresh :4 :1 R10 33 k GND R11 PWM 15 19 Vbat VS PSD 4 VS PTD 7 9 VS POD 8 6 MTV R20 16 k 11 FCT T/t and Vpeak T/t or Vpeak P2 47 k Lilon SLA LOAD NiCd NiMH 3/6/9 cell SLA 2/4/6 cell Lilon 1/2/3 cell C5 470 µF NTC R17 130 k Vsl LED 13 12 VP VS R24 80 k (0.1%)
400 µH BYV28 R1 1 k (only for more than 3 cells D1 BYD74D single multi LED TR3 BC337
R15 270 C3 100 nF
5
16
4.25 V
R16 8.2 k P1 Tmax adjust. 47 k R21 15 k R19 75 k R18 24 k R22 12 k
R5 750
NTC 10 k (25 oC)
D2
C1 100 µF
TEA1102
1
Vstb
Vreg adjust.
TR2 BC337 TR4 TIP110
SMPS mode linear mode AO RFSH
18 10
20
Rref
R2 62
NiCd 3 NiMH 3 SLA 2 Lilon 1 R23 62 k (1A fast charge)
(3)
NiCd 6 NiMH 6 SLA 4 Lilon 2
NiCd 9 NiMH 9 SLA 6 Lilon 3 R26 8 k (0.1%) R27 8 k (0.1%)
LS refresh C2 1.5 nF R12 0 (Rb)
14 17
OSC R25 40 k (0.1%) R28 10 k (0.1%)
IB
2
3 Rsense (1A refresh)
GND
6 k
R13(2) 5.1 k (0.15A top off)
C4 220 pF
handbook, full pagewidth
R14 0.1 (1)
MBH068
TEA1102; TEA1102T; TEA1102TS
100 mV 100 mV (1) R14 = ------------------- or R14 = ----------------------------- if not applicable. I fast ch arg e I refresh R14 × I top off (2) R13 = -----------------------------------3 µA 1.25 × R13 (3) R23 = ---------------------------------------------R14 × I fast ch arg e
Preliminary specification
Fig.4 Basic test board diagram.
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
TEA1102; TEA1102T; TEA1102TS
handbook, full pagewidth V (DC)
I 7 to 11.5 V
TR1 BD231
(D2 for more than 3 NiCD cells)
+ battery R10 200 k (1%)
(Rsupply = 270 for more than 3 NiCD cells) R1 1 k D1 LED :4 :1 :4 :1 :4 :1 VS GND VS GND VS GND PWM TR2 BC337 R3 180 AO RFSH LS IB 15 18 10 14 17 2 3 GND C4 220 pF (fosc = 75 kHz) R8 62 k (0.5 A fast charge) OSC 19 Vbat 9 PTD 7 11 FCT MTV R7 SLA = 0 Lilion = 4.3 k NiCd/NiMH = 5 16 VS R2 1.5 k
Vsl
13
12
VP
C3 100 nF 4.25 V R6 10 k
POD
6
8
NTC
C1 100 µF
TEA1102
PSD 4 1 Vstb NiCd NiMH 3 cells SLA 2 cells Rref Lilon 1 cell
C5 470 µF
20
C2 1.5 nF R9 100 k (0.1%)
(Rb)
R4 5.1 k (75 mA top off)
R5 0.22 Rsense
- battery
MBH069
Fig.5 Linear application diagram.
1999 Jan 27
18
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
TEA1102; TEA1102T; TEA1102TS
handbook, full pagewidth
TR4
D8
refresh
C5 +BAT
TR1 R1 C1 +Vin TR3
D1 L1 LIN D9 R25 D10 R30 P2 R23 R26 R27 Vbat +Vs Vsl C6 MTV C4 R29 R19 R16 NTC R14 GND C3 NTC R18 D3 Vsense R17 R12 R22 R21 R20 PWM C7 1L 2L 3L LIN C2 R24
R28
Vstb R5 refresh R10 D7 R11 fast-charge R6 protection R7 R8 100% R9 no-battery -Vin D2 D6 D4 :4PSD:1 S-LED-M :4POD:1 PTD R4 R3 I b R15
1
R13 GND
number of cells TR2
PWM R2
D5
FCT SLA Li-Ion dT/dt or V dT/dt and V -BAT
P1
TEA1102 TEST BOARD, V2 JB D&A NIJMEGEN
MBH073
Fig.6 Component side of printed-circuit board (test board).
1999 Jan 27
19
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
TEA1102; TEA1102T; TEA1102TS
handbook, full pagewidth
86.35
81.28
MBH072
Dimensions in mm.
Fig.7 Track side of printed-circuit board (test board).
1999 Jan 27
20
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
TEA1102; TEA1102T; TEA1102TS
handbook, full pagewidth
TR1 R1
TR2 R8 1 R10
R3 PSD D1 R2 POD PTD :1 :4 C1 R4
R9
C2
R7 R6 R5 C3
C4
-Vin
-battery
Fig.8 Component side of printed-circuit board (linear application) scale 1 : 1.
handbook, full pagewidth
Fig.9 Track side of printed-circuit board (linear application) scale 1 : 1.
1999 Jan 27
21
TEA1102 LINEAR JB D&A CIC NIJM
MBH070
MJIN CIC A&D BJ RAENIL 2011AET
+Vin
+battery
C5
MBH071
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
PACKAGE OUTLINES DIP20: plastic dual in-line package; 20 leads (300 mil)
TEA1102; TEA1102T; TEA1102TS
SOT146-1
D seating plane
ME
A2
A
L
A1
c Z e b1 b 20 11 MH w M (e 1)
pin 1 index E
1
10
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 4.2 0.17 A1 min. 0.51 0.020 A2 max. 3.2 0.13 b 1.73 1.30 0.068 0.051 b1 0.53 0.38 0.021 0.015 c 0.36 0.23 0.014 0.009 D
(1)
E
(1)
e 2.54 0.10
e1 7.62 0.30
L 3.60 3.05 0.14 0.12
ME 8.25 7.80 0.32 0.31
MH 10.0 8.3 0.39 0.33
w 0.254 0.01
Z (1) max. 2.0 0.078
26.92 26.54 1.060 1.045
6.40 6.22 0.25 0.24
Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT146-1 REFERENCES IEC JEDEC EIAJ SC603 EUROPEAN PROJECTION
ISSUE DATE 92-11-17 95-05-24
1999 Jan 27
22
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
TEA1102; TEA1102T; TEA1102TS
SO20: plastic small outline package; 20 leads; body width 7.5 mm
SOT163-1
D
E
A X
c y HE v M A
Z 20 11
Q A2 A1 pin 1 index Lp L 1 e bp 10 w M detail X (A 3) A
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 2.65 0.10 A1 0.30 0.10 A2 2.45 2.25 A3 0.25 0.01 bp 0.49 0.36 c 0.32 0.23 D (1) 13.0 12.6 0.51 0.49 E (1) 7.6 7.4 0.30 0.29 e 1.27 0.050 HE 10.65 10.00 L 1.4 Lp 1.1 0.4 Q 1.1 1.0 0.043 0.039 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z
(1)
0.9 0.4 0.035 0.016
0.012 0.096 0.004 0.089
0.019 0.013 0.014 0.009
0.419 0.043 0.055 0.394 0.016
8o 0o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT163-1 REFERENCES IEC 075E04 JEDEC MS-013AC EIAJ EUROPEAN PROJECTION
ISSUE DATE 95-01-24 97-05-22
1999 Jan 27
23
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
TEA1102; TEA1102T; TEA1102TS
SSOP20: plastic shrink small outline package; 20 leads; body width 5.3 mm
SOT339-1
D
E
A X
c y HE v M A
Z 20 11
Q A2 pin 1 index A1 (A 3) Lp L 1 e bp 10 w M detail X A
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max. 2.0 A1 0.21 0.05 A2 1.80 1.65 A3 0.25 bp 0.38 0.25 c 0.20 0.09 D (1) 7.4 7.0 E (1) 5.4 5.2 e 0.65 HE 7.9 7.6 L 1.25 Lp 1.03 0.63 Q 0.9 0.7 v 0.2 w 0.13 y 0.1 Z (1) 0.9 0.5 8 0o
o
Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION SOT339-1 REFERENCES IEC JEDEC MO-150AE EIAJ EUROPEAN PROJECTION
ISSUE DATE 93-09-08 95-02-04
1999 Jan 27
24
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
SOLDERING Introduction This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mount components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mount ICs, or for printed-circuit boards with high population densities. In these situations reflow soldering is often used. Through-hole mount packages SOLDERING BY DIPPING OR BY SOLDER WAVE The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joints for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg(max)). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. MANUAL SOLDERING Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. Surface mount packages REFLOW SOLDERING Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. 1999 Jan 27 25 MANUAL SOLDERING
TEA1102; TEA1102T; TEA1102TS
Typical reflow peak temperatures range from 215 to 250 °C. The top-surface temperature of the packages should preferable be kept below 230 °C. WAVE SOLDERING Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed. If wave soldering is used the following conditions must be observed for optimal results: · Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. · For packages with leads on two sides and a pitch (e): larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. · For packages with leads on four sides, the footprint must be placed at a 45° angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 °C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications.
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 °C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 °C.
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
Suitability of IC packages for wave, reflow and dipping soldering methods
TEA1102; TEA1102T; TEA1102TS
SOLDERING METHOD MOUNTING PACKAGE WAVE Through-hole mount DBS, DIP, HDIP, SDIP, SIL Surface mount HLQFP, HSQFP, HSOP, SMS PLCC(4), SQFP SSOP, TSSOP, VSO Notes 1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 2. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. 3. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 4. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 5. Wave soldering is only suitable for LQFP, QFP and TQFP packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. SO LQFP, QFP, TQFP suitable(2) not suitable(3) suitable not recommended(4)(5) not suitable not recommended(6) REFLOW(1) - suitable suitable suitable suitable suitable - - - - - DIPPING suitable
1999 Jan 27
26
Philips Semiconductors
Preliminary specification
Fast charge ICs for NiCd, NiMH, SLA and LiIon
NOTES
TEA1102; TEA1102T; TEA1102TS
1999 Jan 27
27
Philips Semiconductors a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstraße 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 489 4339/4239, Fax. +30 1 481 4240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SÃO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 62 5344, Fax.+381 11 63 5777 Internet: http://www.semiconductors.philips.com
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 © Philips Electronics N.V. 1999
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Printed in The Netherlands
465002/750/04/pp28
Date of release: 1999 Jan 27
Document order number:
9397 750 04793