Text preview for : kmb6d0dn35qb.pdf part of KEC kmb6d0dn35qb . Electronic Components Datasheets Active components Transistors KEC kmb6d0dn35qb.pdf
Back to : kmb6d0dn35qb.pdf | Home
SEMICONDUCTOR KMB6D0DN35QB
TECHNICAL DATA Dual N-Ch Trench MOSFET
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
H
characteristics. It is mainly suitable for DC/DC Converters.
T
D P G L
U
FEATURES
A
VDSS=35V, ID=6A.
DIM MILLIMETERS
Drain-Source ON Resistance. A _
4.85 + 0.2
B1 _
3.94 + 0.2
RDS(ON)=28m (Max.) @VGS=10V 8 5
B2 _
6.02 + 0.3
RDS(ON)=42m (Max.) @VGS=4.5V D _
0.4 + 0.1
B1 B2 G 0.15+0.1/-0.05
Super High Dense Cell Design
1 H _
1.63 + 0.2
4
Very fast switching L _
0.65 + 0.2
P 1.27
T 0.20+0.1/-0.05
U 0.1 MAX
MAXIMUM RATING (Ta=25 Unless otherwise noted)
FLP-8
CHARACTERISTIC SYMBOL PATING UNIT
Drain Source Voltage VDSS 35V V
Gate Source Voltage VGSS 20 V Marking
Ta=25 ID * 6 A Type Name
Drain Current
Pulsed(Note1) IDP 24 A
Drain Source Diode Forward Current IS 1.3 A KMB6D0DN
PD *
35QB
Drain Power Dissipation Ta=25 2 W
Lot No.
Tj 101
Maximum Junction Temperature -50~150
Storage Temperature Range Tstg -50~150
Thermal Resistance, Junction to Ambient RthJA* 62.5 /W
* : Surface Mounted on FR4 Board (25mm 25mm, 1.5t)
PIN CONNECTION (TOP VIEW)
S1 1 8 D1 1 8
G1 2 7 D1 2 7
S2 3 6 D2 3 6
G2 4 5 D2 4 5
2011. 2. 25 Revision No : 0 1/5
KMB6D0DN35QB
ELECTRICAL CHARACTERISTICS (Tj=25 ) UNLESS OTHERWISE NOTED
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 35 - - V
Drain Cut-off Current IDSS VDS=35V, VGS=0V - - 1 A
Gate Leakage Current IGSS VGS= 20V, VDS=0V - - 100 nA
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.0 2.0 3.0 V
VGS=10.0V, ID=6A - 24 28
Drain-Source ON Resistance RDS(ON) m
VGS=4.5V, ID=5A - 35 42
On-State Drain Current ID(ON) VDS=5V, VGS=10V 20 - - A
Forward Transconductance gfs VDS=10V, ID=6A - 20 - S
Dynamic
Input Capacitance Ciss - 460 -
Ouput Capacitance Coss VDS=15V, f=1MHz, VGS=0V - 170 - pF
Reverse Transfer Capacitance Crss - 50 -
Total Gate Charge Qg - 9.0 12.6
Gate-Source Charge Qgs VDS=28V, VGS=10V, ID=6A (Note2,3) - 1.5 - nC
Gate-Drain Charge Qgd - 3.0 -
Total Gate Charge Qg VDS=28V, VGS=5V, ID=6A (Note2,3) - 5.5 -
Turn-On Delay Time td(on) - 16 -
Turn-On Rise Time tr VDD=15V, VGS=10V - 14.5 25.5
ns
Turn-Off Delay Time td(off) ID=1A, RG=6 (Note2,3) - 40 -
Turn-Off Fall Time tf - 11.5 21
Source-Drain Diode Ratings
Source-Drain Forward Voltage VSDF IDR=1.7A, VGS=0V - 0.75 1.2 V
Note1) Repetivity rating : Pulse width Limited by juntion temperature.
Note2) Pulse tesl : Pulse width 300 , Duty cycle 2%
Note3) Essentially independenl of operating temperature.
2011. 2. 25 Revision No : 0 2/5
KMB6D0DN35QB
2011. 2. 25 Revision No : 0 3/5
KMB6D0DN35QB
2011. 2. 25 Revision No : 0 4/5
KMB6D0DN35QB
2011. 2. 25 Revision No : 0 5/5