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Guilin Strong Micro-Electronics Co.,Ltd.
GM1162
MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Collector-Emitter Voltage
VCEO -50 Vdc
-
Collector-Base Voltage
VCBO -50 Vdc
-
Emitter-Base Voltage
VEBO -5.0 Vdc
-
Collector Current-Continuous
Ic -150 mAdc
-
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
PD 225 mW
FR-5 Board(1)
TA=25 25
1.8 mW/
Derate above25 25
Total Device Dissipation 300 mW
PD
Alumina Substrate ,(2)TA=25
Derate above25 25 2.4 mW/
Thermal Resistance Junction to Ambient
RJA 417 /W
Junction and Storage Temperature
TJ,Tstg -55to+150
DEVICE MARKING
GM1162
HFE:70-140=SO; 120-240=SY; 200-400=SG
Guilin Strong Micro-Electronics Co.,Ltd.
GM1162
ELECTRICAL CHARACTERISTICS
=25 unless otherwise noted 25)
(TA=25 )
Characteristic Symbol Min Type Max Unit
OFF CHARACTERISTICS
Emitter Cutoff Current
IEBO -- -- -0.1 A
(VEB=-5.0v,IC=0)
Collector Cutoff Current
ICBO -- -- -0.1 A
(VCB=-50v,IE=0)
Collector Saturation Voltage
VCE(sat) -- -0.1 -0.3 Vdc
(Ic=-100mAdc,IB=-10mA)
DC Current Gain
HFE 70 -- 400
(VCE=-6.0v,IC=-2.0mA)
Gain Bandwidth Product
fT 80 -- -- MHz
(VCE=-10v,IC=-1.0mA)
Noise Figure
NF -- 1.0 10 dB
(V CE=-6V,Ic=-0.1mA,f=1kHz,Rg=10k)
Output Capacitance
Cob -- 4.0 7.0 pF
(VCB=-10v,IE=0,f=1.0MHz)
1. FR-5=1.0